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公开(公告)号:US3460007A
公开(公告)日:1969-08-05
申请号:US3460007D
申请日:1967-07-03
Applicant: RCA CORP
Inventor: SCOTT JOSEPH H JR
IPC: C23C8/00 , H01L21/00 , H01L21/02 , H01L21/225 , H01L21/331 , H01L29/00 , H01L29/73 , H01L11/00 , H01L15/00
CPC classification number: H01L28/20 , C23C8/00 , H01L21/00 , H01L21/2257 , H01L29/00 , H01L29/66295 , H01L29/66303 , H01L29/7304 , Y10S148/043 , Y10S148/055 , Y10S148/113 , Y10S148/114 , Y10S148/118 , Y10S148/123 , Y10S148/124
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公开(公告)号:US3549911A
公开(公告)日:1970-12-22
申请号:US3549911D
申请日:1968-12-05
Applicant: RCA CORP
Inventor: SCOTT JOSEPH H JR
IPC: G11C11/403 , G11C16/04 , H01L29/792 , H03K17/60
CPC classification number: H01L29/792 , G11C11/403 , G11C16/0466
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3.Fabrication of semiconductive devices with silicon nitride coatings 失效
Title translation: 用氮化硅涂层制造半导体器件公开(公告)号:US3520722A
公开(公告)日:1970-07-14
申请号:US3520722D
申请日:1967-05-10
Applicant: RCA CORP
Inventor: SCOTT JOSEPH H JR
IPC: H01L21/318 , B44D1/18
CPC classification number: H01L21/3185 , Y10S148/003 , Y10S148/114
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公开(公告)号:US3472689A
公开(公告)日:1969-10-14
申请号:US3472689D
申请日:1967-01-19
Applicant: RCA CORP
Inventor: SCOTT JOSEPH H JR
CPC classification number: H01L21/00 , C23C16/345 , H01L21/3185 , H01L23/29 , H01L2924/0002 , Y10S148/043 , Y10S148/051 , Y10S148/053 , Y10S148/113 , Y10S148/114 , Y10S148/125 , H01L2924/00
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公开(公告)号:US3449647A
公开(公告)日:1969-06-10
申请号:US3449647D
申请日:1967-01-16
Applicant: RCA CORP
Inventor: SCOTT JOSEPH H JR , OLMSTEAD JOHN A
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