Patent search ap:("RCA CORP") AND inv:"OLMSTEAD JOHN A" Page 1

1.

发明授权
Remote cutoff junction gate field effect transistor 失效
Title translation: 远程切割结门控场效应晶体管

公开(公告)号：US3449647A

公开(公告)日：1969-06-10

申请号：US3449647D

申请日：1967-01-16

Applicant: RCA CORP

Inventor： SCOTT JOSEPH H JR , OLMSTEAD JOHN A

IPC: H01L29/00 , H01L29/80 , H01L13/00

CPC classification number: H01L29/00 , H01L29/80

2.

发明授权
Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic 失效
Title translation: 具有栅极 - 绝缘体变化的场效应晶体管实现远程截止特性

公开(公告)号：US3374407A

公开(公告)日：1968-03-19

申请号：US37167464

申请日：1964-06-01

Applicant: RCA CORP

Inventor： OLMSTEAD JOHN A

IPC: H01L29/10 , H01L29/423 , H01L29/51

CPC classification number: H01L29/1041 , H01L29/42368 , H01L29/51

3.

发明授权
Semiconductor devices having modifier-containing surface oxide layer 失效
Title translation: 具有含改性剂的表面氧化物层的半导体器件

公开(公告)号：US3340445A

公开(公告)日：1967-09-05

申请号：US42052364

申请日：1964-12-23

Applicant: RCA CORP

Inventor： SCOTT JR JOSEPH H , OLMSTEAD JOHN A

IPC: C23C16/40 , H01L21/00 , H01L21/225 , H01L21/316 , H01L29/00

CPC classification number: H01L21/00 , C23C16/402 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/2255 , H01L21/2258 , H01L21/31612 , H01L29/00

4.

发明授权
Insulated offset gate field effect transistor 失效

公开(公告)号：US3339128A

公开(公告)日：1967-08-29

申请号：US38665464

申请日：1964-07-31

Applicant: RCA CORP

Inventor： OLMSTEAD JOHN A , SCOTT JOSEPH H , PHILIP KUZNETZOFF

IPC: H01L29/00 , H01L29/423 , H01L29/78

CPC classification number: H01L29/7831 , H01L29/00 , H01L29/42364 , H01L29/42368 , H01L29/42376

5.

发明授权
Gas discharge devices 失效

公开(公告)号：US2777966A

公开(公告)日：1957-01-15

申请号：US41474854

申请日：1954-03-08

Applicant: RCA CORP

Inventor： OLMSTEAD JOHN A , JOHNSON EDWARD O

IPC: H01J3/02

CPC classification number: H01J3/025 , H01J2893/0061

Patent Agency Ranking