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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190164608A1

    公开(公告)日：2019-05-30

    申请号：US16137305

    申请日：2018-09-20

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Futoshi IGAUE

    IPC: G11C15/04 ,  G11C29/38 ,  G11C29/44

    Abstract: The present invention provides a semiconductor device that can reduce the power consumption, including: a plurality of search memory cells arranged in a matrix; a plurality of match lines provided corresponding to each memory cell row to determine match/mismatch between data stored in the search memory cell and search data; a plurality of match line retention circuits provided corresponding to each of the match lines; a storage unit for storing information relating to the state of each of the match lines; and a selection circuit for selectively activating the match line retention circuits based on the information stored in the storage unit.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20170062051A1

    公开(公告)日：2017-03-02

    申请号：US15227161

    申请日：2016-08-03

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Naoya WATANABE ,  Futoshi IGAUE

    IPC: G11C15/04

    CPC classification number: G11C15/04 ,  G11C15/00 ,  G11C15/046

    Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

    Abstract translation: 减少TCAM设备的消耗电流。 半导体器件包括多个子阵列，每个子阵列包括TCAM单元阵列。 每个子阵列搜索输入搜索数据的相应部分。 当对应的第一控制信号被激活时，每个子阵列输出指示每个条目匹配的搜索结果，而不进行搜索。

    SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT 有权
    包括内部电压发生电路的半导体器件

    公开(公告)号：US20130249624A1

    公开(公告)日：2013-09-26

    申请号：US13900210

    申请日：2013-05-22

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Mihoko AKIYAMA ,  Futoshi IGAUE ,  Kenji YOSHINAGA ,  Masashi MATSUMURA ,  Fukashi MORISHITA

    IPC: G05F1/46

    CPC classification number: G05F1/468 ,  G11C5/025 ,  G11C5/147

    Abstract: A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.

    Abstract translation: 半导体集成电路器件具有设置在每个用于六个存储器宏的电源电路单元的负电压产生电路。 因此，相对于负电压的变化的响应增加。 在待机模式下，通过开关电路连接六个存储器宏的负电压供给线，并且仅在六个电源电路单元的六个负电压产生电路中仅一个电源电路单元的负电压产生电路 活性。 因此，可以防止待机电流的增加。

    SEMICONDUCTOR DEVICE AND INFORMATION PROCESSING SYSTEM
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND INFORMATION PROCESSING SYSTEM 审中-公开
    半导体器件和信息处理系统

    公开(公告)号：US20170060438A1

    公开(公告)日：2017-03-02

    申请号：US15228631

    申请日：2016-08-04

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Futoshi IGAUE ,  Kenji YOSHINAGA ,  Naoya WATANABE ,  Mihoko AKIYAMA

    IPC: G06F3/06 ,  G11C15/04

    CPC classification number: G11C15/04

    Abstract: The present invention makes it possible to form a circuit configuration that is capable of executing a keyword search at an increased speed while suppressing an increase in the memory capacity of a content-addressable memory. A semiconductor device according to an aspect of the present invention searches an input data string for a predesignated keyword, and includes a first content-addressable memory that stores a partial keyword corresponding to a predetermined number of data beginning with the first data of the keyword, a second content-addressable memory that stores the entirety of the keyword, and a control circuit that is coupled to the first content-addressable memory and to the second content-addressable memory. When a portion matching the partial keyword is detected in the input data string by a search in the first content-addressable memory, the second content-addressable memory executes a search on search data extracted from the input data string.

    Abstract translation: 本发明使得可以形成能够以抑制增加内容寻址存储器的存储容量的方式以增加的速度执行关键字搜索的电路配置。 根据本发明的一个方面的半导体器件搜索用于预先指定的关键词的输入数据串，并且包括第一内容寻址存储器，其存储与从关键字的第一数据开始的预定数量的数据相对应的部分关键字， 存储关键字整体的第二可内容寻址存储器，以及耦合到第一可内容寻址存储器和第二内容寻址存储器的控制电路。 当通过在第一可内容寻址存储器中的搜索在输入数据串中检测到匹配部分关键字的部分时，第二内容可寻址存储器对从输入数据串提取的搜索数据执行搜索。

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