公开(公告)号：US20160020207A1

公开(公告)日：2016-01-21

申请号：US14800207

申请日：2015-07-15

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L27/088 ,  H01L29/20 ,  H01L23/532 ,  H01L29/417 ,  H01L29/45 ,  H01L27/06 ,  H01L23/528

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：USRE48450E1

公开(公告)日：2021-02-23

申请号：US15919925

申请日：2018-03-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuma Onishi ,  Yoshitaka Otsu ,  Hiroshi Kimura ,  Tetsuya Nitta ,  Shinichiro Yanagi ,  Katsumi Morii

IPC: H01L29/06 ,  H01L21/764 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/10 ,  H01L29/08 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.

公开(公告)号：US09722066B2

公开(公告)日：2017-08-01

申请号：US15055604

申请日：2016-02-28

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/20 ,  H01L23/528 ,  H01L23/532 ,  H01L27/06 ,  H01L27/088 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：US20160181411A1

公开(公告)日：2016-06-23

申请号：US15055604

申请日：2016-02-28

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L29/45 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract translation: 提高电极的电迁移率。 漏电极部分地形成在漏极焊盘的侧表面上。 在这种情况下，漏电极与漏极焊盘集成，并且在漏极焊盘的侧表面沿着第一方向（y方向）延伸。 凹部在平面图中位于与漏电极重叠的区域中。 漏电极的至少一部分被埋在凹部中。 面向排水垫的凹部的侧面在第一方向（y方向）上进入排水垫。

公开(公告)号：US10074740B2

公开(公告)日：2018-09-11

申请号：US15642299

申请日：2017-07-05

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L23/528 ,  H01L23/532 ,  H01L27/088 ,  H01L29/417 ,  H01L27/06 ,  H01L29/45 ,  H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：USRE46773E1

公开(公告)日：2018-04-03

申请号：US15093108

申请日：2016-04-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuma Onishi ,  Yoshitaka Otsu ,  Hiroshi Kimura ,  Tetsuya Nitta ,  Shinichiro Yanagi ,  Katsumi Morii

IPC: H01L29/00 ,  H01L29/06 ,  H01L27/092 ,  H01L27/11521 ,  H01L27/11526 ,  H01L21/764 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

Abstract: A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.

公开(公告)号：US09293457B2

公开(公告)日：2016-03-22

申请号：US14800207

申请日：2015-07-15

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L27/088 ,  H01L27/06 ,  H01L29/20 ,  H01L23/528 ,  H01L29/417 ,  H01L29/45 ,  H01L23/532

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract translation: 提高电极的电迁移率。 漏电极部分地形成在漏极焊盘的侧表面上。 在这种情况下，漏电极与漏极焊盘集成，并且在漏极焊盘的侧表面沿着第一方向（y方向）延伸。 凹部在平面图中位于与漏电极重叠的区域中。 漏电极的至少一部分被埋在凹部中。 面向排水垫的凹部的侧面在第一方向（y方向）上进入排水垫。

公开(公告)号：US20170301782A1

公开(公告)日：2017-10-19

申请号：US15642299

申请日：2017-07-05

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L23/532 ,  H01L27/06 ,  H01L29/66 ,  H01L29/417 ,  H01L23/528 ,  H01L29/20 ,  H01L27/088 ,  H01L29/45 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：US08692352B2

公开(公告)日：2014-04-08

申请号：US13725389

申请日：2012-12-21

Applicant: Renesas Electronics Corporation

Inventor： Kazuma Onishi ,  Yoshitaka Otsu ,  Hiroshi Kimura ,  Tetsuya Nitta ,  Shinichiro Yanagi ,  Katsumi Morii

IPC: H01L29/00

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0922 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

Abstract: A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.

Abstract translation: 一种半导体器件，其通过简单的工艺消除了对高填充性的需要及其制造方法。 在半导体衬底的表面上完成包括源极区和漏极区的高击穿电压横向MOS晶体管。 在半导体衬底的表面中制造在平面图中观察时围绕晶体管的沟槽。 在晶体管和沟槽中形成绝缘膜，以覆盖晶体管并在沟槽中形成气隙空间。 到达晶体管的源极区域和漏极区域的接触孔分别制成层间绝缘膜。