公开(公告)号：US11217670B2

公开(公告)日：2022-01-04

申请号：US16722355

申请日：2019-12-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuji Takahashi ,  Masaki Watanabe ,  Masashi Sahara ,  Kentaro Yamada ,  Masaki Sakashita ,  Shinichi Maeda ,  Yoshiaki Yamada

IPC: H01L29/417 ,  H01L29/732 ,  H01L21/324 ,  H01L29/40 ,  H01L21/02 ,  H01L29/47

Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.

公开(公告)号：US10199338B2

公开(公告)日：2019-02-05

申请号：US15153537

申请日：2016-05-12

Applicant: Renesas Electronics Corporation

Inventor： Taku Kanaoka ,  Masashi Sahara ,  Yoshio Fukayama ,  Yutaro Ebata ,  Kazuhisa Higuchi ,  Koji Fujishima

IPC: H01L27/12 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/48 ,  H01L21/762 ,  H01L27/02 ,  H01L23/12 ,  H01L23/495 ,  H01L23/498

Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.