公开(公告)号：US20240006275A1

公开(公告)日：2024-01-04

申请号：US18307394

申请日：2023-04-26

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Noriko NUMATA ,  Koichi HASEGAWA ,  Tatsuaki TSUKUDA

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L23/49562 ,  H01L23/49513 ,  H01L23/3121 ,  H01L24/40 ,  H01L24/84 ,  H01L24/48 ,  H01L24/45 ,  H01L21/56 ,  H01L2224/40175 ,  H01L2224/32245 ,  H01L24/32 ,  H01L2224/73263 ,  H01L24/73 ,  H01L2224/84897 ,  H01L2224/48175 ,  H01L2224/45147 ,  H01L2224/73221

Abstract: A source pad electrically coupled with a source of a MOSFET of a semiconductor chip and located at a position below a lead in cross-sectional view is electrically connected with the lead for source via a conductive member bonded to the source pad and a wire bonded to the conductive member.