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    IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    成像装置及其制造方法

    公开(公告)号：US20160172405A1

    公开(公告)日：2016-06-16

    申请号：US14952543

    申请日：2015-11-25

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Shinya HORI

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

    Abstract translation: 在包括光电二极管的芯片形成区域周围的区域中形成通过硅层和第一层间绝缘膜的沟槽型通孔。 在槽型通孔中，形成与沟槽型通孔对应的壁状壁状导电贯通部。 电极焊盘与壁型导电贯通部分接触。 电极焊盘通过壁式导电贯通部分电连接到第一互连件。

    SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20150249102A1

    公开(公告)日：2015-09-03

    申请号：US14634557

    申请日：2015-02-27

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Takashi TERADA ,  Shinya HORI

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

    Abstract translation: 半导体器件具有包括背面照明型光电转换元件，标记状外观部分，焊盘电极和耦合部分的芯片区域。 标记状外观部分包括覆盖形成在半导体衬底中的沟槽部分的整个侧表面的绝缘膜。 焊盘电极布置在与标记状外观部分重叠的位置。 耦合部分耦合焊盘电极和标记状外观部分。 衬底的另一个主表面侧的焊盘电极的至少一部分通过从衬底的另一个主表面侧到达焊盘电极的开口露出。 标记状外观部分和联接部分被布置成在平面图中至少部分地围绕开口的外圆周。

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