公开(公告)号：US20150249102A1

公开(公告)日：2015-09-03

申请号：US14634557

申请日：2015-02-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takashi TERADA ,  Shinya HORI

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Abstract translation: 半导体器件具有包括背面照明型光电转换元件，标记状外观部分，焊盘电极和耦合部分的芯片区域。 标记状外观部分包括覆盖形成在半导体衬底中的沟槽部分的整个侧表面的绝缘膜。 焊盘电极布置在与标记状外观部分重叠的位置。 耦合部分耦合焊盘电极和标记状外观部分。 衬底的另一个主表面侧的焊盘电极的至少一部分通过从衬底的另一个主表面侧到达焊盘电极的开口露出。 标记状外观部分和联接部分被布置成在平面图中至少部分地围绕开口的外圆周。

公开(公告)号：US20160181301A1

公开(公告)日：2016-06-23

申请号：US15058668

申请日：2016-03-02

Applicant: Renesas Electronics Corporation

Inventor： Takashi TERADA ,  Shinya HORI

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

公开(公告)号：US20170221942A1

公开(公告)日：2017-08-03

申请号：US15491670

申请日：2017-04-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takashi TERADA ,  Shinya HORI

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

公开(公告)号：US20160155825A1

公开(公告)日：2016-06-02

申请号：US15017459

申请日：2016-02-05

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshiaki IWAMATSU ,  Takashi TERADA ,  Hirofumi SHINOHARA ,  Kozo ISHIKAWA ,  Ryuta TSUCHIYA ,  Kiyoshi HAYASHI

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/265 ,  H01L21/308 ,  H01L21/321

CPC classification number: H01L29/66795 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/321 ,  H01L29/785

Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.