公开(公告)号：US20180182706A1

公开(公告)日：2018-06-28

申请号：US15324646

申请日：2014-08-08

Applicant: Renesas Electronics Corporation

Inventor： Yoshihiro NOMURA

IPC: H01L23/525

CPC classification number: H01L23/5256 ,  H01L21/82 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/0617

Abstract: A semiconductor device includes an insulating film formed to cover an electric fuse (EF1), an insulating film (IL1), an insulating film (IL2), an electric fuse (EF1), an insulating film (IL1), and an insulating film (IL2). The electric fuse (EF1) includes a fuse-blowing portion (FC1), a first pad portion (PD1), and a second pad portion (PD2). The fuse-blowing portion (FC1) is formed between the first pad portion (PD1) and the second pad portion (PD2) in a first direction and is a rectangular shape having a first short side and a second short side along a second direction perpendicular to the first direction. The insulating film (IL1) is formed continuously between the first short side and the second short side to cover the surface of the fuse-blowing portion (FC1). The insulating film (IL2) is formed to planarly surround the insulating film (IL1) and is arranged at an interval from the insulating film (IL1). The stress of the insulating film (IL1) and the insulating film (IL2) is greater than a stress of the insulating film covering the insulating films.

公开(公告)号：US20210376097A1

公开(公告)日：2021-12-02

申请号：US17316017

申请日：2021-05-10

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yotaro GOTO ,  Katsumi EIKYU ,  Yoshihiro NOMURA

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28

Abstract: A gate electrode is formed on a semiconductor substrate between an n-type source region and an n-type drain region via a first insulating film. The first insulating film has second and third insulating films adjacent to each other in a plan view and, in a gate length direction of the gate electrode, the second insulating film is located on an n-type source region side, and the third insulating film is located on an n-type drain region side. The second insulating film is thinner than the third insulating film. The third insulating film is made of a laminated film having a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, and a third insulating film on the second insulating film, and each bandgap of the three insulating films is larger than that of the second insulating film.