公开(公告)号：US20240162343A1

公开(公告)日：2024-05-16

申请号：US18452805

申请日：2023-08-21

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Yuji ENARI ,  Takashi TONEGAWA

IPC分类号： H01L29/78 ,  H01L23/00 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7802 ,  H01L24/05 ,  H01L24/06 ,  H01L29/1095 ,  H01L29/66712 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05082 ,  H01L2224/05557 ,  H01L2224/05561 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2924/13091

摘要： An interlayer insulating film is formed on an upper surface of a semiconductor substrate. A source pad and a kelvin pad, a gate pad, and a drain pad each having a smaller plane area than a plane area of the source pad are formed on the interlayer insulating film. A first plating layer is formed on the source pad. A second plating layer is formed on each of the kelvin pad, the gate pad, and the drain pad. A material of an uppermost surface of the first plating layer is a metal other than a noble metal, and a material of an uppermost surface of the second plating layer is a noble metal.