公开(公告)号：US20230103256A1

公开(公告)日：2023-03-30

申请号：US17892626

申请日：2022-08-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tatsuya USAMI ,  Yoshiki MARUYAMA ,  Yuki MURAYAMA ,  Yuji ISHII

IPC: H01L23/00

Abstract: A semiconductor device includes: a semiconductor substrate having first and second main surfaces; interlayer insulating films laminated on the first main surface in a thickness direction from the second main surface toward the first main surface; a top wiring arranged on a top interlayer insulating film of the plurality of interlayer insulating films, which is provided farthest from the first main surface in the thickness direction; and a passivation film arranged on the top interlayer insulating film so as to cover the top wiring. The top wiring includes a first wiring portion and a second wiring portion that extend in a first direction in plan view and are adjacent to each other in a second direction orthogonal to the first direction. A first distance between an upper surface of the top wiring and the top interlayer insulating film in the thickness direction is 2.7 μm or more.

公开(公告)号：US20230069864A1

公开(公告)日：2023-03-09

申请号：US17894579

申请日：2022-08-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuki MURAYAMA ,  Makoto KOSHIMIZU ,  Takahiro MORI ,  Junjiro SAKAI ,  Satoshi IIDA

IPC: H01L21/4757 ,  H01L21/4763 ,  H01L21/475 ,  H01L23/31 ,  H01L23/532

Abstract: There is formed a semiconductor device including, as the uppermost-layer wiring of the multilayer wiring layer, a plurality of first wirings, a second wiring, a plurality of first dummy wirings, a second dummy wiring, and a passivation film covering these wirings. The passivation film is patterned by etching with a photoresist film used as a mask, the plurality of first wirings and the plurality of first dummy wirings close thereto are densely formed, and the second dummy wiring is formed so as to surround a periphery of the second wiring sparsely formed directly above an analog circuit portion.