公开(公告)号：US09666498B2

公开(公告)日：2017-05-30

申请号：US14728280

申请日：2015-06-02

Applicant: RF Micro Devices, Inc.

Inventor： Robert Charles Dry

IPC: H01L23/13 ,  H01L23/36 ,  H01L23/538

CPC classification number: H01L23/13 ,  H01L23/36 ,  H01L23/5383 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: The present disclosure relates to a ring-frame power package. The ring-frame power package includes a thermal carrier and a ring structure. The thermal carrier has a carrier surface. The ring structure is disposed over the carrier surface of the thermal carrier so that a portion of the carrier surface is exposed through an interior opening of the ring body. The ring structure also includes one or more interconnect tabs that extend outward from an outer periphery of the ring body. Each interconnect tab includes a top plated area that covers at least a portion of a top surface and a bottom plated area that covers at least a bottom surface of the respective interconnect tab. Notably, each top plated area also covers a contact portion of the ring body that is adjacent to the respective interconnect tab. Each top plated area is electrically coupled to the corresponding bottom plated area.

公开(公告)号：US20160071781A1

公开(公告)日：2016-03-10

申请号：US14847558

申请日：2015-09-08

Applicant: RF Micro Devices, Inc.

Inventor： David Charles Sheridan ,  Robert Charles Dry ,  Don Willis

IPC: H01L23/367 ,  H01L23/373 ,  H01L25/07 ,  H01L23/498

CPC classification number: H01L23/345 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/49827 ,  H01L23/49844 ,  H01L25/072 ,  H01L27/088 ,  H01L27/095 ,  H01L29/1079 ,  H01L29/4232 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/73265 ,  H05K7/205 ,  H05K7/20963 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An integrated power module having a depletion mode device and an enhancement mode device that is configured to prevent an accidental on-state condition for the depletion mode device during a gate signal loss is disclosed. In particular, the disclosed integrated power module is structured to provide improved isolation and thermal conductivity. The structure includes a substrate having a bottom drain pad for the depletion mode device disposed on the substrate and an enhancement mode device footprint-sized cavity that extends through the substrate to the bottom drain pad. A thermally conductive and electrically insulating slug substantially fills the cavity to provide a higher efficient thermal path between the enhancement mode device and the bottom drain pad for the depletion mode device.

Abstract translation: 具有耗尽型器件和增强型器件的集成电源模块被配置为在栅极信号丢失期间防止耗尽型器件的意外导通状态。 特别地，所公开的集成功率模块被构造成提供改进的隔离和导热性。 该结构包括具有用于耗尽型器件的底部漏极焊盘的衬底，其设置在衬底上，以及增强模式器件占位面积尺寸的空腔，其延伸穿过衬底到底部漏极焊盘。 导热和电绝缘的芯块基本上填充空腔，以在增强模式器件和用于耗尽型器件的底部漏极焊盘之间提供更高效的热路径。

公开(公告)号：US20150348897A1

公开(公告)日：2015-12-03

申请号：US14728280

申请日：2015-06-02

Applicant: RF Micro Devices, Inc.

Inventor： Robert Charles Dry

IPC: H01L23/498 ,  H01L23/367

CPC classification number: H01L23/13 ,  H01L23/36 ,  H01L23/5383 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: The present disclosure relates to a ring-frame power package. The ring-frame power package includes a thermal carrier and a ring structure. The thermal carrier has a carrier surface. The ring structure is disposed over the carrier surface of the thermal carrier so that a portion of the carrier surface is exposed through an interior opening of the ring body. The ring structure also includes one or more interconnect tabs that extend outward from an outer periphery of the ring body. Each interconnect tab includes a top plated area that covers at least a portion of a top surface and a bottom plated area that covers at least a bottom surface of the respective interconnect tab. Notably, each top plated area also covers a contact portion of the ring body that is adjacent to the respective interconnect tab. Each top plated area is electrically coupled to the corresponding bottom plated area.

Abstract translation: 本发明涉及一种环形电源封装。 环形框架功率封装包括热载体和环形结构。 热载体具有载体表面。 环结构设置在热载体的载体表面上，使得载体表面的一部分通过环体的内部开口露出。 环形结构还包括从环形体的外周向外延伸的一个或多个互连突片。 每个互连突片包括覆盖顶表面的至少一部分的顶部镀覆区域和覆盖相应互连突片的至少底面的底部镀覆区域。 值得注意的是，每个顶部镀覆区域还覆盖与相应互连突片相邻的环形体的接触部分。 每个顶部镀覆区域电耦合到相应的底部镀覆区域。

公开(公告)号：US09536803B2

公开(公告)日：2017-01-03

申请号：US14847558

申请日：2015-09-08

Applicant: RF Micro Devices, Inc.

Inventor： David Charles Sheridan ,  Robert Charles Dry ,  Don Willis

IPC: H01L23/34 ,  H01L25/07 ,  H05K7/20 ,  H01L27/095 ,  H01L27/088 ,  H01L29/10 ,  H01L23/373 ,  H01L23/367 ,  H01L23/498 ,  H01L29/423

CPC classification number: H01L23/345 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/49827 ,  H01L23/49844 ,  H01L25/072 ,  H01L27/088 ,  H01L27/095 ,  H01L29/1079 ,  H01L29/4232 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/73265 ,  H05K7/205 ,  H05K7/20963 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An integrated power module having a depletion mode device and an enhancement mode device that is configured to prevent an accidental on-state condition for the depletion mode device during a gate signal loss is disclosed. In particular, the disclosed integrated power module is structured to provide improved isolation and thermal conductivity. The structure includes a substrate having a bottom drain pad for the depletion mode device disposed on the substrate and an enhancement mode device footprint-sized cavity that extends through the substrate to the bottom drain pad. A thermally conductive and electrically insulating slug substantially fills the cavity to provide a higher efficient thermal path between the enhancement mode device and the bottom drain pad for the depletion mode device.

Abstract translation: 具有耗尽型器件和增强型器件的集成电源模块被配置为在栅极信号丢失期间防止耗尽型器件的意外导通状态。 特别地，所公开的集成功率模块被构造成提供改进的隔离和导热性。 该结构包括具有用于耗尽型器件的底部漏极焊盘的衬底，其设置在衬底上，以及增强模式器件占位面积尺寸的空腔，其延伸穿过衬底到底部漏极焊盘。 导热和电绝缘的芯块基本上填充空腔，以在增强模式器件和用于耗尽型器件的底部漏极焊盘之间提供更高效的热路径。