公开(公告)号：US20160072444A1

公开(公告)日：2016-03-10

申请号：US14849936

申请日：2015-09-10

Applicant: RFAXIS, INC.

Inventor： OLEKSANDR GORBACHOV ,  QIANG LI ,  FLOYD ASHBAUGH ,  AYDIN SEYEDI ,  LOTHAR MUSIOL ,  LISETTE L. ZHANG

IPC: H03F1/02 ,  H03F3/45 ,  H03F3/21 ,  H03F1/30 ,  H03F3/193

CPC classification number: H03F3/193 ,  H03F1/0261 ,  H03F1/301 ,  H03F1/3205 ,  H03F2200/18 ,  H03F2200/451

Abstract: An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A minor transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal.

Abstract translation: RF功率放大器偏置电路具有启动斜坡信号输入，主电流源输入，辅助电流源输入和电路输出。 辅助电流源输入端连接有上拉电容。 斜坡开关晶体管连接到起始斜坡信号输入，并且选择性地将辅助电流源输入端连接到斜坡上升电容器。 缓冲级具有连接到斜坡上升电容器的输入端和连接到和节点处的主电流源输入端的输出端。 次级晶体管具有对应于电路输出的栅极端子和连接到和节点和栅极端子的源极端子。