公开(公告)号：US20230019587A1

公开(公告)日：2023-01-19

申请号：US17862338

申请日：2022-07-11

申请人： ROCKLEY PHOTONICS LIMITED

发明人： Guomin YU ,  Henri NYKÄNEN ,  Evie KHO

IPC分类号： H01L31/105 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  G02B6/42

摘要： A semiconductor photodiode. The semiconductor photodiode including: an input waveguide, arranged to receive an optical signal at a first port and provide the optical signal from the second port; a photodiode waveguide, arranged to receive the optical signal from the second port of the input waveguide, and at least partially convert the optical signal into an electrical signal; and an electro-static defence component, located adjacent to the photodiode waveguide. The electro-static defence component and the photodiode waveguide are electrically connected in parallel.

公开(公告)号：US20190243070A1

公开(公告)日：2019-08-08

申请号：US16317151

申请日：2017-07-13

申请人： ROCKLEY PHOTONICS LIMITED

发明人： John DRAKE ,  Damiana LEROSE ,  Henri NYKÄNEN

IPC分类号： G02B6/30

CPC分类号： G02B6/305 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/1223 ,  G02B6/131 ,  G02B6/132 ,  G02B6/1347 ,  G02B6/136 ,  G02B6/42 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12147 ,  G02B2006/12152 ,  G02B2006/12176 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01L21/76224 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/823821 ,  H01L21/8258 ,  H01S5/021 ,  H01S5/0216

摘要： An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; etching an unmasked portion of the device layer down to at least an upper buried oxide layer, to provide a cavity; etching a first isolation trench and a second isolation trench into a mode converter layer, the mode converter layer being: on an opposite side of the upper buried oxide layer to the device layer and between the upper buried oxide layer and a lower buried oxide layer, the lower buried oxide layer being above a substrate; wherein the first isolation trench and the second isolation trench define a tapered waveguide; filling the first isolation trench and the second isolation trench with an insulating material, so as to optically isolate the tapered waveguide from the remaining mode converter layer; and regrowing the etched region of the device layer.