公开(公告)号：US20170299902A1

公开(公告)日：2017-10-19

申请号：US15321723

申请日：2016-11-10

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin YU ,  Hooman ABEDIASL ,  Damiana LEROSE ,  Kevin MASUDA ,  Andrea TRITA ,  Aaron ZILKIE

IPC: G02F1/025 ,  G02F1/21 ,  G02B6/122 ,  G02B6/136 ,  G02B6/13 ,  G02F1/17 ,  G02B6/12

CPC classification number: G02F1/025 ,  G02B6/1228 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/12097 ,  G02F1/015 ,  G02F1/174 ,  G02F1/21 ,  G02F2001/212

Abstract: An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

公开(公告)号：US20190243070A1

公开(公告)日：2019-08-08

申请号：US16317151

申请日：2017-07-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： John DRAKE ,  Damiana LEROSE ,  Henri NYKÄNEN

IPC: G02B6/30

CPC classification number: G02B6/305 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/1223 ,  G02B6/131 ,  G02B6/132 ,  G02B6/1347 ,  G02B6/136 ,  G02B6/42 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12147 ,  G02B2006/12152 ,  G02B2006/12176 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01L21/76224 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/823821 ,  H01L21/8258 ,  H01S5/021 ,  H01S5/0216

Abstract: An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; etching an unmasked portion of the device layer down to at least an upper buried oxide layer, to provide a cavity; etching a first isolation trench and a second isolation trench into a mode converter layer, the mode converter layer being: on an opposite side of the upper buried oxide layer to the device layer and between the upper buried oxide layer and a lower buried oxide layer, the lower buried oxide layer being above a substrate; wherein the first isolation trench and the second isolation trench define a tapered waveguide; filling the first isolation trench and the second isolation trench with an insulating material, so as to optically isolate the tapered waveguide from the remaining mode converter layer; and regrowing the etched region of the device layer.

公开(公告)号：US20210335677A1

公开(公告)日：2021-10-28

申请号：US17324953

申请日：2021-05-19

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Aaron ZILKIE ,  Andrew RICKMAN ,  Damiana LEROSE

IPC: H01L21/8238 ,  G02B6/136 ,  G02B6/13 ,  H01L21/8258 ,  G02B6/12 ,  G02B6/30

Abstract: A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

公开(公告)号：US20190244866A1

公开(公告)日：2019-08-08

申请号：US16317171

申请日：2017-07-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Aaron ZILKIE ,  Andrew RICKMAN ,  Damiana LEROSE

IPC: H01L21/8238 ,  G02B6/13 ,  G02B6/136 ,  H01L21/8258

CPC classification number: G02B6/305 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/1223 ,  G02B6/131 ,  G02B6/132 ,  G02B6/1347 ,  G02B6/136 ,  G02B6/42 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12147 ,  G02B2006/12152 ,  G02B2006/12176 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01L21/76224 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/823821 ,  H01L21/8258 ,  H01S5/021 ,  H01S5/0216

Abstract: A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

公开(公告)号：US20200012043A1

公开(公告)日：2020-01-09

申请号：US16465535

申请日：2017-12-01

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Hooman ABEDIASL ,  Damiana LEROSE ,  Amit Singh NAGRA ,  Guomin YU

IPC: G02B6/12 ,  G02F1/025 ,  H01L31/0232

Abstract: A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

公开(公告)号：US20190331855A1

公开(公告)日：2019-10-31

申请号：US16465538

申请日：2017-12-01

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Damiana LEROSE ,  Hooman ABEDIASL ,  Amit Singh NAGRA

IPC: G02B6/134 ,  G02F1/025 ,  G02B6/122

Abstract: A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 μm; and wherein the separation between the second sidewall of the ridge and the second slab interface is no more than 10 μm.