公开(公告)号：US20200371436A1

公开(公告)日：2020-11-26

申请号：US16879173

申请日：2020-05-20

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

Inventor： Seung-Keun KIM ,  Hyung-Tak JEON ,  Kyu Cheol LEE ,  Kyung-Jae PARK ,  Seung-Kyu SONG

IPC: G03F7/09 ,  G03F7/40 ,  G03F7/38 ,  C08K5/3492 ,  C08K5/33 ,  C08K5/11 ,  C08F220/32 ,  C08F220/24 ,  C08F220/18 ,  C08F220/06 ,  C08F222/40 ,  C08F212/08 ,  G03F7/028 ,  C08K5/00 ,  C08K3/04 ,  G02F1/13357 ,  G02F1/1335

Abstract: The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance RSCI measured by the SCI (specular component included) method and the reflectance RSCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (RSCE/RSCI) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.

公开(公告)号：US20240085791A1

公开(公告)日：2024-03-14

申请号：US18508781

申请日：2023-11-14

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

Inventor： Seung-Keun KIM ,  Kyung-Jae PARK

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/18 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/162 ,  G03F7/168 ,  G03F7/18 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

Abstract: The colored photosensitive resin composition of the present invention maintains excellent resolution, visibility, and the like while it has excellent reflectance RSCI measured by the SCI (specular component included) method, reflectance RSCE measured by the SCE (specular component excluded) method, and the ratio between them (RSCE/RSCI), and has a uniform film thickness in an appropriate range. Thus, it can be formed into a multilayer cured film that simultaneously satisfies such physical properties as a high reflectance and a high light-shielding property. In addition, when a cured film is formed from the composition, it is possible to form a pattern on a multilayer film in a single development process. Thus, it can be advantageously used for a quantum dot display device.