公开(公告)号：US20090045507A1

公开(公告)日：2009-02-19

申请号：US11435305

申请日：2006-05-15

申请人： Rajendra D. Pendse ,  Marcos Karnezos ,  Kyung-Moon Kim ,  Koo Hong Lee ,  Moon Hee Lee ,  Orion Starr

发明人： Rajendra D. Pendse ,  Marcos Karnezos ,  Kyung-Moon Kim ,  Koo Hong Lee ,  Moon Hee Lee ,  Orion Starr

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012

摘要： Methods for forming flip chip interconnection, in which the bump interconnect is defined at least in part by an underfill. The underfill includes a material that is thermally cured; that is, raising the temperature of the underfill material can result in progressive curing of the underfill through stages including a gel stage and a fully cured stage. According to the invention, during at least an early stage in the process the semiconductor chip is carried by a thermode, which is employed to control the temperature of the assembly in a specified way. Also, flip chip interconnections and flip chip packages made according to the methods of invention.

摘要翻译： 用于形成倒装芯片互连的方法，其中凸块互连至少部分地由底部填充限定。 底部填充物包括热固化的材料; 也就是说，提高底部填充材料的温度可导致底部填充物逐步固化，包括凝胶阶段和完全固化的阶段。 根据本发明，在该工艺的至少早期阶段，半导体芯片由用于以特定方式控制组件的温度的热电极承载。 此外，根据本发明的方法制造的倒装芯片互连和倒装芯片封装。

公开(公告)号：US07736950B2

公开(公告)日：2010-06-15

申请号：US11435305

申请日：2006-05-15

申请人： Rajendra D. Pendse ,  Marcos Karnezos ,  Kyung-Moon Kim ,  Koo Hong Lee ,  Moon Hee Lee ,  Orion Starr

发明人： Rajendra D. Pendse ,  Marcos Karnezos ,  Kyung-Moon Kim ,  Koo Hong Lee ,  Moon Hee Lee ,  Orion Starr

IPC分类号： H01L21/44 ,  H01L29/40

CPC分类号： H01L21/563 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012

摘要： Methods for forming flip chip interconnection, in which the bump interconnect is defined at least in part by an underfill. The underfill includes a material that is thermally cured; that is, raising the temperature of the underfill material can result in progressive curing of the underfill through stages including a gel stage and a fully cured stage. According to the invention, during at least an early stage in the process the semiconductor chip is carried by a thermode, which is employed to control the temperature of the assembly in a specified way. Also, flip chip interconnections and flip chip packages made according to the methods of invention.

摘要翻译： 用于形成倒装芯片互连的方法，其中凸块互连至少部分地由底部填充限定。 底部填充物包括热固化的材料; 也就是说，提高底部填充材料的温度可导致底部填充物逐步固化，包括凝胶阶段和完全固化的阶段。 根据本发明，在该工艺的至少早期阶段，半导体芯片由用于以特定方式控制组件的温度的热电极承载。 此外，根据本发明的方法制造的倒装芯片互连和倒装芯片封装。