摘要:
The fabrication and use of corrosion resistant Cu/Cu(x)Ge(y) alloy or Cu/Cu.sub.3 Ge phase bilayer interconnect metal lines is disclosed. A solid state, selective process of forming a Cu.sub.3 Ge phase or Cu(x)Ge(y) alloy by reacting GeH.sub.4 gas with Cu surface at low pressure in CVD reactor at temperatures of 200.degree.-450.degree. C. is described. Corrosion resistant semiconductor devices and packaging interconnects where corrosion of copper interconnects was a problem, is now made possible by the Cu/Cu.sub.3 Ge phase or Cu.sub.x Ge.sub.y alloy bilayer of the present invention. A structure where copper vias are completely or partially converted to Cu.sub.3 Ge or Cu.sub.x Ge.sub.y is presented. Also, dissimilar metals like Al--Cu can be connected by Cu.sub.3 Ge phase or Cu.sub.x Ge.sub.y alloy filled vias to improve electromigration performance.
摘要:
Associative index extended (AIX) caches can be functionally implemented through a reconfigurable decoder that employs programmable line decoding. The reconfigurable decoder features scalability in the number of lines, the number of index extension bits, and the number of banks. The reconfigurable decoder can switch between pure direct mapped (DM) mode and direct mapped-associative index extended (DM-AIX) mode of operation. For banked configurations, the reconfigurable decoder provides the ability to run some banks in DM mode and some other banks in DM-AIX mode. A cache employing this reconfigurable decoder can provide a comparable level of latency as a DM cache with minimal modifications to a DM cache circuitry of an additional logic circuit on a critical signal path, while providing low power operation at low area overhead with SA cache-like miss rates. Address masking and most-recently-used-save replacement policy can be employed with a single bit overhead per line.
摘要:
A method of automatically generating structure files employing a full structure generator automated program is provided. An annotated device layout file is generated from a design layout by annotating the codes for design shapes with additional text representing the functionality of a physical structure associated with each design shape. Functioning individual semiconductor devices are identified from the annotated device layout file, and a circuit area including multiple interconnected semiconductor devices are identified. A front-end-of-line (FEOL) device structure file and a back-end-of-line (BEOL) device structure file are generated from layer by layer analysis of the components of the annotated device layout within the circuit area. Finite element meshes (FEMs) are generated for the FEOL and BEOL structure files and merged to provide a structure file that can be employed for simulation of semiconductor devices therein.
摘要:
A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.
摘要:
A method for analyzing circuits includes identifying one or more device zones in a full device structure. The device zones provide areas of interest to be analyzed. A partial device is generated that representatively includes the one or more device zones. Analytical meshes of the partial device are reduced by employing physical characteristics of the full device structure. The partial device is simulated, using a processor, to obtain device output information in the areas of interest that is representative of the full device structure. Systems are also disclosed.
摘要:
Methods and systems for migrating circuit layouts. A floorplan layout is built for a target circuit using a subset of constraints that characterize a layout structure of an original circuit. Shape-constraint-based scaling is used on the floorplan layout by scaling parts of the floorplan layout in accordance with a plurality of different scaling ratios such that portions of the floorplan layout are concurrently scaled with the plurality of different scaling ratios. Cells are placed at locations defined by the floorplan layout. The floorplan layout is checked with shape-constraint-based legalization using all of the constraints to produce a migrated layout.
摘要:
A leakage current monitor circuit provides an accurate statistically representative analog of true off-state leakage current in a digital circuit integrated on a die. At least one N-type transistor and at least one P-type transistor separate from the digital circuit are sized to represent the total area of the corresponding type transistors in the digital circuit. The gates of the N-type transistor and P-type transistors are set to voltages according to the corresponding off-state logic levels of the digital circuit. The N-type and P-type transistors form a portion of corresponding current mirror circuits, which can provide outputs to a leakage current monitor and/or a control circuit such as a comparator that determines when leakage current for the N-type or P-type devices has exceeded a threshold. The output of the measurement/control circuit can be used to determine a temperature of and/or control operation of the digital circuit or the system environment of the integrated circuit.
摘要:
Anti-reverse engineering techniques are provided. In one aspect, a method for forming at least one feature in an insulating layer is provided. The method comprises the following steps. Ions are selectively implanted in the insulating layer so as to form at least one implant region within the insulating layer, the implanted ions being configured to alter an etch rate through the insulating layer within the implant region. The insulating layer is etched to, at the same time, form at least one void both within the implant region and outside of the implant region, wherein the etch rate through the insulating layer within the implant region is different from an etch rate through the insulating layer outside of the implant region. The void is filled with at least one conductor material to form the feature in the insulating layer.
摘要:
An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with pockets of buried insulator strata and FETs formed on the strata are SOI FETs. The SOI FETs may include Partially Depleted SOI (PD-SOI) FETs and Fully Depleted SOI (FD-SOI) FETs and the chip may include bulk FETs as well. The FETs are formed by contouring the surface of a wafer, conformally implanting oxygen to a uniform depth, and planarizing to remove the Buried OXide (BOX) in bulk FET regions.
摘要翻译:一种集成电路(IC)芯片,其可以是具有绝缘体上硅(SOI)场效应晶体管(FET)和制造芯片的方法的体CMOS IC芯片。 IC芯片包括具有埋入绝缘体层的凹坑的区域,并且在层上形成的FET是SOI FET。 SOI FET可以包括部分耗尽的SOI(PD-SOI)FET和完全耗尽的SOI(FD-SOI)FET,并且芯片也可以包括体FET。 FET通过轮廓化晶片的表面,将氧气保形地均匀地注入到均匀的深度,并平坦化以去除体FET区域中的掩埋氧化物(BOX)来形成。
摘要:
Techniques are provided for fuse/anti-fuse structures, including an inner conductor structure, an insulating layer spaced outwardly of the inner conductor structure, an outer conductor structure disposed outwardly of the insulating layer, and a cavity-defining structure that defines a cavity, with at least a portion of the cavity-defining structure being formed from at least one of the inner conductor structure, the insulating layer, and the outer conductor structure. Methods of making and programming the fuse/anti-fuse structures are also provided.