Phonon-blocking, electron-transmitting low-dimensional structures
    8.
    发明授权
    Phonon-blocking, electron-transmitting low-dimensional structures 有权
    声子阻挡,电子传递低维结构

    公开(公告)号:US07342169B2

    公开(公告)日:2008-03-11

    申请号:US10265409

    申请日:2002-10-07

    IPC分类号: H01L35/16

    摘要: A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with a lattice mismatch and at which structural integrity of the first and second material systems is substantially maintained. The at least first and second material systems have a charge carrier transport direction normal to the physical interface and preferably periodically arranged in a superlattice structure.

    摘要翻译: 一种热电结构和装置,其至少包括第一和第二材料体系,其具有不同的晶格常数并彼此接触;以及物理界面,所述至少第一和第二材料体系在该物理界面处以晶格失配结合,并且其结构完整性 的第一和第二材料体系被大大保持。 所述至少第一和第二材料体系具有垂直于所述物理界面的电荷载流子传输方向,优选地周期性地布置在超晶格结构中。