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    Phonon-blocking, electron-transmitting low-dimensional structures
    7.
    发明授权
    Phonon-blocking, electron-transmitting low-dimensional structures 有权
    声子阻挡，电子传递低维结构

    公开(公告)号：US07342169B2

    公开(公告)日：2008-03-11

    申请号：US10265409

    申请日：2002-10-07

    申请人： Rama Venkatasubramanian ,  Edward Siivola ,  Thomas Colpitts ,  Brooks O'Quinn

    发明人： Rama Venkatasubramanian ,  Edward Siivola ,  Thomas Colpitts ,  Brooks O'Quinn

    IPC分类号： H01L35/16

    CPC分类号： B82Y10/00 ,  H01L35/16 ,  H01L35/26 ,  H01L35/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with a lattice mismatch and at which structural integrity of the first and second material systems is substantially maintained. The at least first and second material systems have a charge carrier transport direction normal to the physical interface and preferably periodically arranged in a superlattice structure.

    摘要翻译： 一种热电结构和装置，其至少包括第一和第二材料体系，其具有不同的晶格常数并彼此接触;以及物理界面，所述至少第一和第二材料体系在该物理界面处以晶格失配结合，并且其结构完整性 的第一和第二材料体系被大大保持。 所述至少第一和第二材料体系具有垂直于所述物理界面的电荷载流子传输方向，优选地周期性地布置在超晶格结构中。

    Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices
    10.
    发明申请
    Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices 审中-公开
    形成热电器件的方法包括具有异质周期的交替层的超晶格结构和相关器件

    公开(公告)号：US20070028956A1

    公开(公告)日：2007-02-08

    申请号：US11402546

    申请日：2006-04-12

    申请人： Rama Venkatasubramanian ,  Edward Siivola ,  Brooks O'Quinn ,  James Caylor ,  Jonathan Pierce

    发明人： Rama Venkatasubramanian ,  Edward Siivola ,  Brooks O'Quinn ,  James Caylor ,  Jonathan Pierce

    IPC分类号： H01L35/34 ,  H01L35/16

    CPC分类号： H01L35/16 ,  H01L35/26 ,  H01L35/34

    摘要： Forming a thermoelectric device may include forming a thermoelectric superlattice including a plurality of alternating layers of different thermoelectric materials wherein a period of the alternating layers varies over a thickness of the superlattice. More particularly, forming the superlattice may include depositing the superlattice on a single crystal substrate using epitaxial deposition. In addition, the single crystal substrate may be removed from the superlattice, and a second thermoelectric superlattice may be provided with the first and second thermoelectric superlattices having opposite conductivity types. Moreover, the first and second thermoelectric superlattices may be thermally coupled in parallel between two thermally conductive plates while electrically coupling the first and second thermoelectric superlattices in series. Related materials and devices and structures are also discussed.

    摘要翻译： 形成热电装置可以包括形成包括多个不同热电材料的交替层的热电超晶格，其中交替层的周期在超晶格的厚度上变化。 更具体地，形成超晶格可以包括使用外延沉积将超晶格沉积在单晶衬底上。 此外，可以从超晶格中去除单晶衬底，并且第二热电超晶格可以设置有具有相反导电类型的第一和第二热电超晶格。 此外，第一和第二热电超晶格可以在两个导热板之间并联热耦合，同时串联电耦合第一和第二热电超晶格。 还讨论了相关材料和装置和结构。