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    Pre-metal dielectric rapid thermal processing for sub-micron technology
    1.
    发明授权
    Pre-metal dielectric rapid thermal processing for sub-micron technology 失效
    用于亚微米技术的金属介电快速热处理

    公开(公告)号：US06514876B1

    公开(公告)日：2003-02-04

    申请号：US09644759

    申请日：2000-08-23

    申请人： Randhir P. S. Thakur ,  John H. Das ,  Dave Clarke

    发明人： Randhir P. S. Thakur ,  John H. Das ,  Dave Clarke

    IPC分类号： H01L2144

    CPC分类号： H01L21/31051 ,  H01L21/02129 ,  H01L21/0214

    摘要： A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperature sufficient for reflow of the silicate glass. In one embodiment, the atmosphere contained within the processing chamber comprises steam in combination with a reactive gas. The reactive gas can be, for instance, hydrogen, oxygen, nitrogen, dinitrogen oxide, ozone, hydrogen peroxide, atomic and/or molecular hydrogen, or radicals or mixtures thereof.

    摘要翻译： 公开了一种在衬底上形成硅酸盐玻璃层的工艺。 首先将硅酸盐玻璃层沉积到诸如半导体晶片的衬底上。 然后将晶片放置在热处理室中并在反应气体存在下加热。 将该物体加热至足以使硅酸玻璃玻璃回流的温度。 在一个实施例中，包含在处理室内的气氛包括与反应气体组合的蒸汽。 反应气体可以是例如氢，氧，氮，二氧化氮，臭氧，过氧化氢，原子和/或分子氢，或其基团或其混合物。

    Process for forming thin dielectric layers in semiconductor devices
    2.
    发明授权
    Process for forming thin dielectric layers in semiconductor devices 有权
    在半导体器件中形成薄介电层的工艺

    公开(公告)号：US06281141B1

    公开(公告)日：2001-08-28

    申请号：US09246821

    申请日：1999-02-08

    申请人： John H. Das ,  Randhir P. S. Thakur

    发明人： John H. Das ,  Randhir P. S. Thakur

    IPC分类号： H01L2131

    CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/518

    摘要： A process for producing thin dielectric films is disclosed. In particular, the process is directed to forming oxide films having a thickness of less than about 60 angstroms. The oxide films can be doped with an element, such as nitrogen or boron. For example, in one embodiment, an oxynitride coating can be formed on a semiconductor wafer. According to the present invention, the very thin coatings are formed by reacting a gas with a semiconductor wafer while the temperature of the wafer is being increased in a rapid thermal processing chamber to a maximum temperature. According to the process, primarily all of the coating is formed during the “ramp up” portion of the heating cycle. Consequently, the wafer is maintained at the maximum target temperature for a very short period of time.

    摘要翻译： 公开了一种制造薄介电膜的方法。 特别地，该方法涉及形成厚度小于约60埃的氧化物膜。 氧化物膜可以掺杂有诸如氮或硼的元素。 例如，在一个实施例中，可以在半导体晶片上形成氧氮化物涂层。 根据本发明，通过在快速热处理室中将晶片的温度提高到最高温度的同时使气体与半导体晶片反应而形成非常薄的涂层。 根据该过程，主要是在加热循环的“上升”部分期间形成所有涂层。 因此，晶片在非常短的时间内保持在最大目标温度。