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    User configurable multivariate time series reduction tool control method
    3.
    发明授权
    User configurable multivariate time series reduction tool control method 有权
    用户可配置的多变量时间序列减少工具控制方法

    公开(公告)号：US06678569B2

    公开(公告)日：2004-01-13

    申请号：US10013070

    申请日：2001-11-06

    申请人： Raymond J. Bunkofske ,  John Z. Colt, Jr. ,  James J McGill ,  Nancy T. Pascoe ,  Maheswaran Surendra ,  Marc A. Taubenblatt ,  Asif Ghias

    发明人： Raymond J. Bunkofske ,  John Z. Colt, Jr. ,  James J McGill ,  Nancy T. Pascoe ,  Maheswaran Surendra ,  Marc A. Taubenblatt ,  Asif Ghias

    IPC分类号： G06F1900

    CPC分类号： G05B23/0221 ,  G05B2219/45031 ,  H01L22/20

    摘要： A method and structure for controlling a manufacturing tool includes measuring different manufacturing parameters of the tool, transforming a plurality of time series of the manufacturing parameters into intermediate variables based on restrictions and historical reference statistics, generating a surrogate variable based on the intermediate variables, if the surrogate variable exceeds a predetermined limit, identifying a first intermediate variable, of the intermediate variables, that caused the surrogate variable to exceed the predetermined limit and identifying a first manufacturing parameter associated with the first intermediate variable, and inhibiting further operation of the tool until the first manufacturing parameter has been modified to bring the surrogate value within the predetermined limit.

    摘要翻译： 用于控制制造工具的方法和结构包括测量工具的不同制造参数，基于限制和历史参考统计将多个制造参数的时间序列变换为中间变量，基于中间变量生成替代变量，如果 替代变量超过预定的限制，识别导致替代变量超过预定极限的中间变量的第一中间变量，并且识别与第一中间变量相关联的第一制造参数，并且禁止工具的进一步操作直到 修改了第一制造参数以使代理值在预定限度内。

    Reactive ion etching buffer mask
    5.
    发明授权
    Reactive ion etching buffer mask 失效
    反应离子蚀刻缓冲掩模

    公开(公告)号：US5118384A

    公开(公告)日：1992-06-02

    申请号：US807960

    申请日：1991-12-10

    申请人： David L. Harmon ,  Michael L. Kerbaugh ,  Nancy T. Pascoe ,  John F. Rembetski

    发明人： David L. Harmon ,  Michael L. Kerbaugh ,  Nancy T. Pascoe ,  John F. Rembetski

    IPC分类号： H01L21/3065 ,  H01L21/308

    CPC分类号： H01L21/3065 ,  H01L21/3085

    摘要： An improved mask and method of forming a deep and uniform width trench in a substrate and the resulting structure is disclosed. A substrate material such as silicon has deposited thereon a first layer of sacrificial material as a first component of an etch mask, the sacrificial material being a material such as polysilicon that is either etched by or absorbs the same ions which reactively ion etch the substrate. A second layer of material, which resists reactive ion etching, such as silicon dioxide, is deposited over the first layer of material as a second component of the etch mask. The silicon dioxide is patterned in the form of the trench to be formed in the substrate. The layer polysilicon material is then reactive ion etched and the reactive ion etching continued to form a trench in the silicon substrate. The polysilicon acts as a sacrificial material being etched by any ions that are reflected from the silicon dioxide or are directed at an angle such that they strike the layer of polysilicon material. Thus, only those ions which are directed essentially normal to the underlying substrate perform the trench etching. This allows the trench to have essentially straight side walls and to be of essentially uniform width.

    摘要翻译： 公开了一种在衬底中形成深而均匀的宽度沟槽的改进的掩模和方法，并且所得到的结构被公开。 诸如硅的衬底材料在其上沉积有第一层牺牲材料作为蚀刻掩模的第一组分，牺牲材料是诸如多晶硅的材料，其被蚀刻或吸收相同的离子，其反应离子蚀刻衬底。 作为蚀刻掩模的第二组分，第二层材料，其抵抗反应离子蚀刻，例如二氧化硅，沉积在第一材料层上。 二氧化硅以形成在衬底中的沟槽的形式构图。 然后层状多晶硅材料被反应离子蚀刻，并且反应离子蚀刻继续在硅衬底中形成沟槽。 多晶硅充当被二氧化硅反射的任何离子蚀刻的牺牲材料，或以一定角度被引导使得它们撞击多晶硅材料层。 因此，仅基本上垂直于下面的衬底的那些离子执行沟槽蚀刻。 这允许沟槽具有基本上直的侧壁并且具有基本均匀的宽度。

    Reactive ion etching buffer mask
    6.
    发明授权
    Reactive ion etching buffer mask 失效
    反应离子蚀刻缓冲掩模

    公开(公告)号：US5298790A

    公开(公告)日：1994-03-29

    申请号：US958462

    申请日：1992-10-08

    申请人： David L. Harmon ,  Michael L. Kerbaugh ,  Nancy T. Pascoe ,  John F. Rembetski

    发明人： David L. Harmon ,  Michael L. Kerbaugh ,  Nancy T. Pascoe ,  John F. Rembetski

    IPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L29/68 ,  H01L29/04 ,  H01L29/06

    CPC分类号： H01L21/3085 ,  H01L21/3065

    摘要： An improved mask and method of forming a deep and width trench in a substrate and the resulting structure is disclosed. A substrate material such as silicon has deposited thereon a first layer of sacrificial material as a first component of an etch mask, the sacrificial material being a material such as polysilicon that is either etched by or absorbs the same ions which reactively ion etch the substrate. A second layer of material, which resists reactive ion etching, such as silicon dioxide, is deposited over the first layer of material as a second component of the etch mask. The silicon dioxide is patterned in the form of the trench to be formed in the substrate. The layer polysilicon material is then reactive ion etched and the reactive ion etching continued to form a trench in the silicon substrate. The polysilicon acts as a sacrificial material being etched by any ions that are reflected from the silicon dioxide or are directed at an angle such that they strike the layer of polysilicon material. Thus, only those ions which are directed essentially normal to the underlying substrate perform the trench etching. This allows the trench to have essentially straight side walls and to be of essentially uniform width.

    摘要翻译： 公开了一种在衬底中形成深和宽沟槽的改进掩模和方法，并且所得到的结构被公开。 诸如硅的衬底材料在其上沉积有第一层牺牲材料作为蚀刻掩模的第一组分，牺牲材料是诸如多晶硅的材料，其被蚀刻或吸收相同的离子，其反应离子蚀刻衬底。 作为蚀刻掩模的第二组分，第二层材料，其抵抗反应离子蚀刻，例如二氧化硅，沉积在第一材料层上。 二氧化硅以形成在衬底中的沟槽的形式构图。 然后层状多晶硅材料被反应离子蚀刻，并且反应离子蚀刻继续在硅衬底中形成沟槽。 多晶硅充当被二氧化硅反射的任何离子蚀刻的牺牲材料，或以一定角度被引导使得它们撞击多晶硅材料层。 因此，仅基本上垂直于下面的衬底的那些离子执行沟槽蚀刻。 这允许沟槽具有基本上直的侧壁并且具有基本均匀的宽度。