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1.发明申请SUBSTRATE AND METHOD FOR THE FORMATION OF CONTINUOUS MAGNESIUM DIBORIDE AND DOPED MAGNESIUM DIBORIDE WIRES 审中-公开形成连续的二氧化钛和二氧化硅二氧化硅线的基板和方法公开(公告)号：US20120178631A1
公开(公告)日：2012-07-12
申请号：US13424856
申请日：2012-03-20
IPC分类号： H01L39/24
CPC分类号： C04B35/76 , C01B35/04 , C04B35/62857 , C04B35/62873 , C04B35/62878 , C04B35/62897 , C04B2235/3206 , C04B2235/3804 , C04B2235/3808 , C04B2235/3813 , C04B2235/3826 , C04B2235/3843 , C04B2235/404 , C04B2235/422 , C04B2235/428 , C04B2235/48 , C04B2235/5244 , C04B2235/5248 , C04B2235/5264 , C04B2235/80 , C04B2235/94 , C23C10/08 , C23C16/28 , C23C16/38 , C23C16/56 , H01L39/2487 , Y10T428/2991
摘要： A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.
摘要翻译： 通过化学气相沉积将化学掺杂的硼涂层施加到碳化硅纤维上，然后将涂覆的光纤暴露于镁蒸气以将掺杂的硼转化为掺杂的二硼化镁和所得的超导体。
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公开(公告)号：US4481257A
公开(公告)日：1984-11-06
申请号：US505567
申请日：1983-06-17
CPC分类号： C04B41/009 , C04B41/52 , C04B41/89 , D01F11/126 , D02G3/16 , Y10T428/2916 , Y10T428/2933
摘要： Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 2370.degree. F., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin protective coating of boron-based refractory material on the surface of the silicon carbide filament both adds strength and provides a surface which is readily bonded to both metals and epoxy matrix materials during the casting of composite structures.
摘要翻译： 通过使用连续的工艺气相沉积来覆盖碳单丝芯来生产碳化硅丝。 通过使碳单丝通过注入硅和碳的气体源的反应器进行沉积。 在约2370°F的沉积温度下，形成碳化硅细晶粒β晶体沉积物。 将硼基耐火材料薄保护涂层应用于碳化硅长丝的表面上都增加了强度，并提供了在铸造复合结构期间易于与金属和环氧基体材料结合的表面。
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公开(公告)号：US06756122B2
公开(公告)日：2004-06-29
申请号：US10361130
申请日：2003-02-07
IPC分类号： B32B900
CPC分类号： C04B41/009 , C04B41/5001 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/0272 , C23C16/26 , C23C16/28 , Y10S427/10 , Y10T428/249953 , Y10T428/30 , C04B41/4554 , C04B2111/00413 , C04B41/5094 , C04B35/522 , C04B38/00 , C04B41/4529 , C04B41/4531
摘要： Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.
摘要翻译： 公开了改进的制品，以及用于制备这种制品的方法，其中首先用碳致密化石墨或类似基底的表面以降低表面孔隙率，同时仍然保留足够的表面纹理以增强随后施加的硼涂层的粘附性。
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公开(公告)号：US06309702B1
公开(公告)日：2001-10-30
申请号：US09382054
申请日：1999-08-24
IPC分类号： C23C1622
CPC分类号： C04B41/009 , C04B41/5001 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/0272 , C23C16/26 , C23C16/28 , Y10S427/10 , Y10T428/249953 , Y10T428/30 , C04B41/4554 , C04B2111/00413 , C04B41/5094 , C04B35/522 , C04B38/00 , C04B41/4529 , C04B41/4531
摘要： Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.
摘要翻译： 公开了改进的制品，以及用于制备这种制品的方法，其中首先用碳致密化石墨或类似基底的表面以降低表面孔隙率，同时仍然保留足够的表面纹理以增强随后施加的硼涂层的粘附性。
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公开(公告)号：US06521291B2
公开(公告)日：2003-02-18
申请号：US09945986
申请日：2001-09-04
IPC分类号： B05D118
CPC分类号： C04B41/009 , C04B41/5001 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/0272 , C23C16/26 , C23C16/28 , Y10S427/10 , Y10T428/249953 , Y10T428/30 , C04B41/4554 , C04B2111/00413 , C04B41/5094 , C04B35/522 , C04B38/00 , C04B41/4529 , C04B41/4531
摘要： Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.
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公开(公告)号：US5733611A
公开(公告)日：1998-03-31
申请号：US413065
申请日：1995-03-29
申请人： Garrett S. Thurston , Raymond J. Suplinskas , Thomas J. Carroll , Donald F. Connors, Jr. , David T. Scaringella , Richard C. Krutenat
发明人： Garrett S. Thurston , Raymond J. Suplinskas , Thomas J. Carroll , Donald F. Connors, Jr. , David T. Scaringella , Richard C. Krutenat
CPC分类号： C04B41/5001 , C04B35/806 , C04B35/83 , C04B41/009 , C23C16/045
摘要： A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.
摘要翻译： 多孔预制件通过加热致密化，同时在前体液体中。 通过使电流通过预制件或浸入液体中的感应线圈来实现加热。 还描述了控制致密化过程的方法。
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公开(公告)号：US4628002A
公开(公告)日：1986-12-09
申请号：US738614
申请日：1985-05-28
CPC分类号： C04B41/009 , C04B41/52 , C04B41/89 , C23C16/029 , C23C16/325 , Y10T428/2918 , Y10T428/292 , Y10T428/2933
摘要： This invention is directed to a surface treatment for SiC monofilament developed for the purpose of increasing the transverse strain-to-failure of composites, particularly aluminum composites. The surface treatment includes a fine grain SiC region adjacent to the bulk or stoichiometric SiC region and a transition region which interacts with the matrix material.
摘要翻译： 本发明涉及用于增加复合材料，特别是铝复合材料的横向应变破坏的目的而开发的SiC单丝的表面处理。 表面处理包括与本体或化学计量的SiC区域相邻的细晶粒SiC区域和与基质材料相互作用的过渡区域。
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公开(公告)号：US5397595A
公开(公告)日：1995-03-14
申请号：US989153
申请日：1992-12-11
IPC分类号： C04B41/85 , C04B35/565 , C04B41/50 , C04B41/52 , C04B41/87 , C04B41/89 , C23C16/44 , C23C18/02 , C23C18/12 , D03D25/00 , B05D3/02
CPC分类号： C04B41/009 , C04B35/565 , C04B41/5053 , C04B41/52 , C04B41/87 , C04B41/89 , C23C16/44 , C04B2111/00405
摘要： In accordance with the invention there is provided a method of producing a densified carbon preform having interior a porous region of graded carbon-silicon carbide, carbon-silicon nitride or ceramic-ceramic composition.
摘要翻译： 根据本发明，提供了一种制造具有内部具有渐变碳 - 碳化硅，碳 - 氮化硅或陶瓷 - 陶瓷组合物的多孔区域的致密碳预型体的方法。
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公开(公告)号：US5389152A
公开(公告)日：1995-02-14
申请号：US959299
申请日：1992-10-09
申请人： Garrett S. Thurston , Raymond J. Suplinskas , Thomas J. Carroll , Donald F. Connors, Jr. , David T. Scaringella , Richard C. Krutenat
发明人： Garrett S. Thurston , Raymond J. Suplinskas , Thomas J. Carroll , Donald F. Connors, Jr. , David T. Scaringella , Richard C. Krutenat
CPC分类号： C04B41/5001 , C04B35/806 , C04B35/83 , C04B41/009 , C23C16/045
摘要： A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.
摘要翻译： 多孔预制件通过加热致密化，同时在前体液体中。 通过使电流通过预制件或浸入液体中的感应线圈来实现加热。 还描述了控制致密化过程的方法。
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10.发明授权
公开(公告)号：US4415609A
公开(公告)日：1983-11-15
申请号：US374992
申请日：1982-05-05
CPC分类号： H05B6/788 , C04B41/4584 , C04B41/81 , C23C16/325
摘要： The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.
摘要翻译： 本发明涉及化学计量碳化硅的表面处理。 将富含碳的碳化硅层施加在碳化硅上。 在碳化硅表面的情况下，富碳层中的硅与碳的比例在富碳层的内部从碳化硅界面处的接近到零变化到大于零，优选为0.3至0.5 在富含碳层的表面远离界面。 还提出了制造碳化硅层的优选方法。
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