摘要:
The invention relates to a lithographic system that includes an illumination system for providing a projection beam of radiation, a mask table for supporting a mask, the mask serving to impart the projection beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned beam onto a target portion of the substrate. The system also comprises a processor arranged to calculate overlay corrections using a reference height map representing a surface of the substrate table or the mask table. The invention allows feed forward correction of non-flatness induced wafer grid distortion during alignment and during exposure, thereby reducing overlay errors caused by differences in flatness characteristics. It provides an indirect qualification method for overlay accuracy related to exposure chuck flatness based on height map information.