公开(公告)号：US20150236091A1

公开(公告)日：2015-08-20

申请号：US14701828

申请日：2015-05-01

Applicant: Renesas Electronics Corporation

Inventor： Hironori YAMAMOTO ,  Fuminori ITO ,  Yoshihiro HAYASHI

IPC: H01L29/06 ,  H01B3/46 ,  H01L23/535

CPC classification number: H01L29/0657 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/228 ,  H01L29/02 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is added thereto. Thus, a porous insulation film is formed by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor (chamber). In the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less.

Abstract translation: 多孔绝缘膜的沉积速率提高，多孔绝缘膜的膜强度提高。 两种以上的具有环状SiO结构作为主要骨架并且具有相互不同结构的有机硅氧烷原料被蒸发并用载气输送到反应器（室），并且包含氧原子的氧化剂气体是 加入。 因此，在反应器（室）中通过等离子体CVD（化学气相沉积）法或等离子体聚合法形成多孔绝缘膜。 在该步骤中，添加的氧化剂气体的流量与载气的流量的比率大于0和0.08以下。

公开(公告)号：US20130299952A1

公开(公告)日：2013-11-14

申请号：US13887668

申请日：2013-05-06

Applicant: Renesas Electronics Corporation

Inventor： Hironori YAMAMOTO ,  Fuminori ITO ,  Yoshihiro HAYASHI

IPC: H01L21/02 ,  H01L29/02

CPC classification number: H01L29/0657 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/228 ,  H01L29/02 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is added thereto. Thus, a porous insulation film is formed by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor (chamber). In the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less.

Abstract translation: 多孔绝缘膜的沉积速率提高，多孔绝缘膜的膜强度提高。 两种以上的具有环状SiO结构作为主要骨架并且具有相互不同结构的有机硅氧烷原料被蒸发并用载气输送到反应器（室），并且包含氧原子的氧化剂气体是 加入。 因此，在反应器（室）中通过等离子体CVD（化学气相沉积）法或等离子体聚合法形成多孔绝缘膜。 在该步骤中，添加的氧化剂气体的流量与载气的流量的比率大于0和0.08以下。

公开(公告)号：US20130178061A1

公开(公告)日：2013-07-11

申请号：US13715280

申请日：2012-12-14

Applicant: Renesas Electronics Corporation

Inventor： Hironori YAMAMOTO ,  Fuminori ITO ,  Yoshihiro HAYASHI

IPC: H01L21/3105 ,  H01L21/3205

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3205 ,  H01L21/76807 ,  H01L21/76826

Abstract: First, a porous insulating film 120 is formed using an organic silica raw material containing a hydrocarbon group. The hydrocarbon group contains, for example, an unsaturated carbon compound, but may contain a saturated carbon compound. The skeleton of the organic silica is, for example, cyclic organic silica. Next, the surface of the porous insulating film 120 is subjected to plasma processing by using a processing gas containing an inactive gas and a reducing gas. Subsequently, in the porous insulating film 120, a wiring trench 123 is formed and is embedded with wiring 124.

Abstract translation: 首先，使用含有烃基的有机二氧化硅原料形成多孔绝缘膜120。 烃基含有例如不饱和碳化合物，但可以含有饱和碳化合物。 有机二氧化硅的骨架是例如环状有机二氧化硅。 接下来，通过使用含有惰性气体和还原气体的处理气体对多孔绝缘膜120的表面进行等离子体处理。 随后，在多孔绝缘膜120中形成布线沟槽123并嵌入布线124。