公开(公告)号：US20180082991A1

公开(公告)日：2018-03-22

申请号：US15824422

申请日：2017-11-28

申请人： Renesas Electronics Corporation

发明人： Hisashi TOYODA ,  Koichi YAMAZAKI ,  Koichi ARAI ,  Tatsuhiro SEKI

IPC分类号： H01L25/18 ,  H01L29/10 ,  H03K17/10

CPC分类号： H01L25/18 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/1095 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48225 ,  H01L2224/49113 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/1207 ,  H01L2924/13062 ,  H01L2924/13091 ,  H02P27/06 ,  H03K17/102 ,  H03K17/6871 ,  H03K17/74 ,  H03K2017/6875 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor device includes a normally-on junction FET having a first gate electrode, a first source electrode and a first drain electrode, a normally-off MOSFET having a second gate electrode, a second source electrode and a second drain electrode, and a voltage applying unit which applies a voltage to the first gate electrode. The first source electrode of the junction FET is electrically connected to the second drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series, and the voltage applying unit applies a second voltage with a polarity opposite to that of a first voltage applied to the first gate electrode when the junction FET is brought into an off-state, to the first gate electrode when the MOSFET is in an on-state.

公开(公告)号：US20160315075A1

公开(公告)日：2016-10-27

申请号：US15097128

申请日：2016-04-12

申请人： Renesas Electronics Corporation

发明人： Hisashi TOYODA ,  Koichi Yamazaki ,  Koichi Arai ,  Tatsuhiro Seki

IPC分类号： H01L25/18 ,  H02P27/06 ,  H01L23/00 ,  H01L29/10 ,  H01L25/07

CPC分类号： H01L25/18 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/1095 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48225 ,  H01L2224/49113 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/1207 ,  H01L2924/13062 ,  H01L2924/13091 ,  H02P27/06 ,  H03K17/102 ,  H03K17/6871 ,  H03K17/74 ,  H03K2017/6875 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor device includes a normally-on junction FET having a gate electrode, a source electrode and a drain electrode and a normally-off MOSFET having a gate electrode, a source electrode and a drain electrode. The source electrode of the junction FET is electrically connected to the drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series. The gate electrode of the junction FET is electrically connected to the gate electrode of the MOSFET.

摘要翻译： 半导体器件包括具有栅电极，源电极和漏电极的常栅结FET，以及具有栅电极，源电极和漏电极的常关MOSFET。 结FET的源电极电连接到MOSFET的漏电极，并且结FET被串联连接到MOSFET。 结FET的栅电极电连接到MOSFET的栅电极。