公开(公告)号：US20170003337A1

公开(公告)日：2017-01-05

申请号：US15098052

申请日：2016-04-13

Applicant: Renesas Electronics Corporation

Inventor： Katsutoshi BITO ,  Daisuke IIJIMA ,  Yuji TAKEHARA

IPC: G01R31/26 ,  H01L29/866 ,  H01L27/06 ,  H01L23/498 ,  H02P29/024 ,  H01L27/02 ,  H02P27/08 ,  H02M7/537 ,  H03K19/0185 ,  H01L29/739 ,  H01L23/34

CPC classification number: H02P29/024 ,  G01R31/30 ,  H01L23/36 ,  H01L23/3735 ,  H01L27/0255 ,  H01L27/0664 ,  H01L29/7395 ,  H01L29/866 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19107 ,  H02M7/537 ,  H02M7/53871 ,  H02M2001/327 ,  H02P27/08 ,  H02P29/0241 ,  H02P29/68 ,  H03K19/018507 ,  H01L2924/00014

Abstract: An obtained margin is smaller than a margin to be kept for a fault period predicted by life prediction based on a power cycle test, extending a maintenance cycle for replacement and so on. A method of detecting a fault of a semiconductor device including a power device mounted on a metal base and a drive circuit for driving the power device, the method detecting a fault of the semiconductor device beforehand based on an increase in thermal resistance between the metal base and the power device. A state of the power device is measured immediately before and after the power device is driven by the drive circuit. A temperature difference of the power device before and after driving is calculated according to the result of measurement. An increase in thermal resistance between the metal base and the power device is detected based on the temperature difference and an amount of electricity inputted to the power device in the driving period, and a fault of the semiconductor device is detected beforehand according to the increase.

Abstract translation: 所获得的余量小于通过基于动力循环测试的寿命预测所预测的故障期间保持的余量，延长维修周期等。 一种检测包括安装在金属基座上的功率器件和用于驱动功率器件的驱动电路的半导体器件的故障的方法，该方法预先基于金属基底之间的热阻增加来检测半导体器件的故障 和电源设备。 功率器件的状态是在驱动电路驱动电力设备之前和之后立即测量的。 根据测量结果计算驱动前后功率器件的温差。 基于在驱动期间输入到功率器件的温度差和电量来检测金属基座和功率器件之间的热阻的增加，并且根据增加预先检测出半导体器件的故障。