公开(公告)号：US20170207128A1

公开(公告)日：2017-07-20

申请号：US15473699

申请日：2017-03-30

Applicant: Renesas Electronics Corporation

Inventor： Koji MAEKAWA ,  Tatsuyoshi MIHARA

IPC: H01L21/8234 ,  H01L29/36 ,  H01L21/266 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/823468 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31116 ,  H01L21/823418 ,  H01L21/823462 ,  H01L29/0615 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/6653 ,  H01L29/66553 ,  Y10S257/90 ,  Y10S438/90

Abstract: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.

公开(公告)号：US20180233414A1

公开(公告)日：2018-08-16

申请号：US15950688

申请日：2018-04-11

Applicant: Renesas Electronics Corporation

Inventor： Koji MAEKAWA ,  Tatsuyoshi MIHARA

IPC: H01L21/8234 ,  H01L29/06 ,  H01L21/266 ,  H01L21/311 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L21/823468 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31116 ,  H01L21/823418 ,  H01L21/823462 ,  H01L29/0615 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/6653 ,  H01L29/66553 ,  Y10S257/90 ,  Y10S438/90

Abstract: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.

公开(公告)号：US20150087128A1

公开(公告)日：2015-03-26

申请号：US14560437

申请日：2014-12-04

Applicant: Renesas Electronics Corporation

Inventor： Koji MAEKAWA ,  Tatsuyoshi MIHARA

IPC: H01L29/66

CPC classification number: H01L21/823468 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31116 ,  H01L21/823418 ,  H01L21/823462 ,  H01L29/0615 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/6653 ,  H01L29/66553 ,  Y10S257/90 ,  Y10S438/90

Abstract: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.

Abstract translation: 为了覆盖第一，第二和第三栅电极，在半导体衬底上形成绝缘膜和另一绝缘膜。 另一绝缘膜被回蚀刻以在绝缘膜的侧表面上形成侧壁间隔物。 然后，去除与第一和第二栅电极的侧壁相对应的绝缘膜的侧表面上的侧壁间隔物，以使侧壁间隔物超过对应于第三栅电极的侧壁的绝缘膜的侧表面。 然后，侧壁间隔物和绝缘膜被回蚀刻，使得侧壁间隔物由绝缘膜形成在第一，第二和第三栅电极的侧壁上。

公开(公告)号：US20160218040A1

公开(公告)日：2016-07-28

申请号：US15089932

申请日：2016-04-04

Applicant: Renesas Electronics Corporation

Inventor： Koji MAEKAWA ,  Tatsuyoshi MIHARA

IPC: H01L21/8234 ,  H01L21/266 ,  H01L21/265 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L21/823468 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31116 ,  H01L21/823418 ,  H01L21/823462 ,  H01L29/0615 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/6653 ,  H01L29/66553 ,  Y10S257/90 ,  Y10S438/90

Abstract: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.

Abstract translation: 为了覆盖第一，第二和第三栅电极，在半导体衬底上形成绝缘膜和另一绝缘膜。 另一绝缘膜被回蚀刻以在绝缘膜的侧表面上形成侧壁间隔物。 然后，去除与第一和第二栅电极的侧壁相对应的绝缘膜的侧表面上的侧壁间隔物，以使侧壁间隔物超过对应于第三栅电极的侧壁的绝缘膜的侧表面。 然后，侧壁间隔物和绝缘膜被回蚀刻，使得侧壁间隔物由绝缘膜形成在第一，第二和第三栅电极的侧壁上。

公开(公告)号：US20150194460A1

公开(公告)日：2015-07-09

申请号：US14586712

申请日：2014-12-30

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Koji MAEKAWA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: A manufacturing procedure of a semiconductor device is simplified. In a manufacturing method of a semiconductor device, in each of regions AR with pixels for detecting different colored lights, a liner film LF1 is formed over an interlayer insulating film IL formed to cover a photodiode PD. Then, an opening OP is formed to reach a midway point of the interlayer insulating film IL while penetrating the liner film LF1. The liner film LF1 is formed such that the thickness of the liner film LF1 is varied among the respective regions AR. A height position of a bottom surface of the opening OP in a region with the thin liner film LF1 is lower than a height position of a bottom surface of the opening OP in a region with the thick liner film LF1.

Abstract translation: 简化了半导体器件的制造过程。 在半导体器件的制造方法中，在具有用于检测不同着色光的像素的区域AR的每个区域中，在形成为覆盖光电二极管PD的层间绝缘膜IL上形成衬垫膜LF1。 然后，形成开口OP以在穿透衬垫膜LF1的同时到达层间绝缘膜IL的中间点。 衬里膜LF1形成为使得衬里膜LF1的厚度在各个区域AR之间变化。 在薄衬里膜LF1的区域中，开口OP的底面的高度位置低于在厚衬里膜LF1的区域中开口OP的底面的高度位置。