公开(公告)号：US20170186689A1

公开(公告)日：2017-06-29

申请号：US15456976

申请日：2017-03-13

Applicant: Renesas Electronics Corporation

Inventor： Takatsugu NEMOTO ,  Yasutaka NAKASHIBA ,  Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Kazunori GO ,  Hiroshi OE ,  Noriko YOSHIKAWA

IPC: H01L23/522 ,  G01R33/06 ,  H01L23/528 ,  G01R31/26 ,  H01F27/28 ,  H01L49/02

CPC classification number: H01L23/5227 ,  G01R15/181 ,  G01R21/00 ,  G01R31/2607 ,  G01R33/06 ,  H01F21/00 ,  H01F27/2804 ,  H01L23/5286 ,  H01L28/10

Abstract: A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. 3). The power line and the semiconductor device overlap each other when viewed from a direction perpendicular to the semiconductor device. The semiconductor device includes two inductors. The power line extends between the two inductors when viewed from a direction perpendicular to the semiconductor device.

公开(公告)号：US20180108609A1

公开(公告)日：2018-04-19

申请号：US15843896

申请日：2017-12-15

Applicant: Renesas Electronics Corporation

Inventor： Takatsugu NEMOTO ,  Yasutaka NAKASHIBA ,  Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Kazunori GO ,  Hiroshi OE ,  Noriko YOSHIKAWA

IPC: H01L23/522 ,  G01R33/06 ,  G01R31/26 ,  H01L49/02 ,  H01F27/28 ,  H01L23/528

CPC classification number: H01L23/5227 ,  G01R15/181 ,  G01R21/00 ,  G01R31/2607 ,  G01R33/06 ,  H01F21/00 ,  H01F27/2804 ,  H01F2017/0073 ,  H01L23/5286 ,  H01L28/10

Abstract: A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. 3). The power line and the semiconductor device overlap each other when viewed from a direction perpendicular to the semiconductor device. The semiconductor device includes two inductors. The power line extends between the two inductors when viewed from a direction perpendicular to the semiconductor device.

公开(公告)号：US20150061660A1

公开(公告)日：2015-03-05

申请号：US14475623

申请日：2014-09-03

Applicant: Renesas Electronics Corporation

Inventor： Takatsugu NEMOTO ,  Yasutaka NAKASHIBA ,  Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Kazunori GO ,  Hiroshi OE ,  Noriko YOSHIKAWA

IPC: G01R21/00 ,  H01F21/00

CPC classification number: H01L23/5227 ,  G01R15/181 ,  G01R21/00 ,  G01R31/2607 ,  G01R33/06 ,  H01F21/00 ,  H01F27/2804 ,  H01L23/5286 ,  H01L28/10

Abstract: A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. 3). The power line and the semiconductor device overlap each other when viewed from a direction perpendicular to the semiconductor device. The semiconductor device includes two inductors. The power line extends between the two inductors when viewed from a direction perpendicular to the semiconductor device.

Abstract translation: 传感器装置包括电力线和半导体器件。 半导体器件包括电感器。 使用互连层（稍后将使用图3描述）形成电感器。 当从垂直于半导体器件的方向观察时，电源线和半导体器件彼此重叠。 半导体器件包括两个电感器。 当从垂直于半导体器件的方向观察时，电力线在两个电感器之间延伸。