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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140078709A1

    公开(公告)日：2014-03-20

    申请号：US14012324

    申请日：2013-08-28

    Applicant: Renesas Electronics Corporation

    Inventor： Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Yasutaka NAKASHIBA ,  Takatsugu NEMOTO

    IPC: H01L23/58

    CPC classification number: H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L2924/0002 ,  H05K9/00 ,  H01L2924/00

    Abstract: To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor.An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

    Abstract translation: 为了抑制由电感器引起的噪声泄漏到外部，并且还被配置为使得磁场强度变化到达电感器。 电感器在平面视图中围绕内部电路，并且还与内部电路电连接。 电感器的上侧由上屏蔽部分覆盖，电感器的下侧由下屏蔽部分覆盖。 上部屏蔽部分通过使用多层布线层形成。 上部屏蔽部分具有多个第一开口。 第一个开口在平面视图中与电感器重叠。

    SENSOR DEVICE
    3.
    发明申请
    SENSOR DEVICE 有权
    传感器设备

    公开(公告)号：US20150061660A1

    公开(公告)日：2015-03-05

    申请号：US14475623

    申请日：2014-09-03

    Applicant: Renesas Electronics Corporation

    Inventor： Takatsugu NEMOTO ,  Yasutaka NAKASHIBA ,  Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Kazunori GO ,  Hiroshi OE ,  Noriko YOSHIKAWA

    IPC: G01R21/00 ,  H01F21/00

    CPC classification number: H01L23/5227 ,  G01R15/181 ,  G01R21/00 ,  G01R31/2607 ,  G01R33/06 ,  H01F21/00 ,  H01F27/2804 ,  H01L23/5286 ,  H01L28/10

    Abstract: A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. 3). The power line and the semiconductor device overlap each other when viewed from a direction perpendicular to the semiconductor device. The semiconductor device includes two inductors. The power line extends between the two inductors when viewed from a direction perpendicular to the semiconductor device.

    Abstract translation: 传感器装置包括电力线和半导体器件。 半导体器件包括电感器。 使用互连层（稍后将使用图3描述）形成电感器。 当从垂直于半导体器件的方向观察时，电源线和半导体器件彼此重叠。 半导体器件包括两个电感器。 当从垂直于半导体器件的方向观察时，电力线在两个电感器之间延伸。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150048481A1

    公开(公告)日：2015-02-19

    申请号：US14527293

    申请日：2014-10-29

    Applicant: Renesas Electronics Corporation

    Inventor： Takasuke HASHIMOTO ,  Shinichi UCHIDA ,  Yasutaka NAKASHIBA ,  Takatsugu NEMOTO

    IPC: H01L23/522

    CPC classification number: H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L2924/0002 ,  H05K9/00 ,  H01L2924/00

    Abstract: To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor.An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

    Abstract translation: 为了抑制由电感器引起的噪声泄漏到外部，并且还被配置为使得磁场强度变化到达电感器。 电感器在平面视图中围绕内部电路，并且还与内部电路电连接。 电感器的上侧由上屏蔽部分覆盖，电感器的下侧由下屏蔽部分覆盖。 上部屏蔽部分通过使用多层布线层形成。 上部屏蔽部分具有多个第一开口。 第一个开口在平面视图中与电感器重叠。

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