公开(公告)号：US20160049315A1

公开(公告)日：2016-02-18

申请号：US14924113

申请日：2015-10-27

Applicant: Renesas Electronics Corporation

Inventor： Tomoaki UNO ,  Tetsuya KAWASHIMA

IPC: H01L21/50

CPC classification number: H01L21/50 ,  H01L21/823475 ,  H01L23/34 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L27/088 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01015 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A conventional semiconductor device used for a power supply circuit such as a DC/DC converter has problems of heat dissipation and downsizing, in particular has the problems of heat dissipation and others in the event of downsizing. A semiconductor device has a structure formed by covering a principal surface of a semiconductor chip having the principal surface and a plurality of MIS type FETs formed over the principal surface with a plurality of metal plate wires having pectinate shapes; allocating the pectinate parts alternately in a planar view over the principal surface; and further electrically coupling the plural metal plate wires to a plurality of terminals.

公开(公告)号：US20130207256A1

公开(公告)日：2013-08-15

申请号：US13754245

申请日：2013-01-30

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoaki UNO ,  Tetsuya KAWASHIMA

IPC: H01L23/34 ,  H01L21/50

CPC classification number: H01L21/50 ,  H01L21/823475 ,  H01L23/34 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L27/088 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01015 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A conventional semiconductor device used for a power supply circuit such as a DC/DC converter has problems of heat dissipation and downsizing, in particular has the problems of heat dissipation and others in the event of downsizing.A semiconductor device has a structure formed by covering a principal surface of a semiconductor chip having the principal surface and a plurality of MIS type FETs formed over the principal surface with a plurality of metal plate wires having pectinate shapes; allocating the pectinate parts alternately in a planar view over the principal surface; and further electrically coupling the plural metal plate wires to a plurality of terminals.

Abstract translation: 用于诸如DC / DC转换器的电源电路的常规半导体器件具有散热和小型化的问题，特别是在尺寸减小的情况下具有散热等问题。 半导体器件具有通过覆盖具有主表面的半导体芯片的主表面和在主表面上形成的多个MIS型FET的多个具有果胶形状的金属板线而形成的结构; 在主表面上的平面视图中交替地分配果胶部分; 并且还将多个金属板电线进一步电耦合到多个端子。