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    Aerosol process for fabricating discontinuous floating gate microelectronic devices
    1.
    发明授权
    Aerosol process for fabricating discontinuous floating gate microelectronic devices 有权
    用于制造不连续浮栅微电子器件的气溶胶工艺

    公开(公告)号：US06723606B2

    公开(公告)日：2004-04-20

    申请号：US09895791

    申请日：2001-06-29

    申请人： Richard C. Flagan ,  Harry A. Atwater ,  Michele L. Ostraat

    发明人： Richard C. Flagan ,  Harry A. Atwater ,  Michele L. Ostraat

    IPC分类号： H01L218247

    CPC分类号： B82Y10/00 ,  G11C2216/06 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/66833

    摘要： A process for forming an aerosol of semiconductor nanoparticles includes pyrolyzing a semiconductor material-containing gas then quenching the gas being pyrolyzed to control particle size and prevent uncontrolled coagulation. The aerosol is heated to densify the particles and form crystalline nanoparticles. In an exemplary embodiment, the crystalline particles are advantageously classified by size using a differential mobility analyzer and particles having diameters outside of a pre-selected range of sizes, are removed from the aerosol. In an exemplary embodiment, the crystalline, classified and densified nanoparticles are oxidized to form a continuous oxide shell over the semiconductor core of the particles. The cores include a density which approaches the bulk density of the pure material of which the cores are composed and the majority of the particle cores are single crystalline. The oxidized particles are deposited on a substrate using thermophoretic, electrophoretic, or other deposition means. The deposited particles form a stratum or discontinuous monolayer of oxidized semiconductor particles. In an exemplary embodiment, the stratum is characterized by a uniform particle density on the order of 1012 to 1013 particles/cm2 and a tightly controlled range of particle sizes. A plurality of adjacent particles contact each other, but the oxide shells provide electrical isolation between the particles of the stratum. Clean processing techniques provide a density of foreign atom contamination of less than 1011 atoms/cm2. The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device exhibits excellent endurance behavior and long-term non-volatility.

    摘要翻译： 用于形成半导体纳米颗粒气溶胶的方法包括热解含半导体材料的气体，然后淬灭被热解的气体以控制粒度并防止不受控制的凝结。 将气溶胶加热以使颗粒致密化并形成结晶纳米颗粒。 在一个示例性实施方案中，结晶颗粒有利地使用差示迁移率分析仪的大小进行分类，并且从气溶胶中除去具有预定尺寸范围外的直径的颗粒。 在一个示例性实施方案中，结晶，分级和致密的纳米颗粒被氧化以在颗粒的半导体芯上形成连续的氧化物壳。 核心包括接近构成芯的纯材料的体积密度的密度，并且大部分颗粒芯是单晶的。 使用热泳，电泳或其他沉积方法将氧化的颗粒沉积在基底上。 沉积的颗粒形成氧化半导体颗粒的层或不连续的单层。 在一个示例性实施方案中，层的特征在于具有约10 12至10 13颗粒/ cm 2的均匀颗粒密度和颗粒尺寸的严格控制范围。 多个相邻的颗粒彼此接触，但是氧化物壳在层的颗粒之间提供电隔离。 清洁处理技术提供小于10 11个原子/ cm 2的外来原子污染物的密度。 该层有利地用作诸如MOSFET之类的非易失性存储器件中的浮动栅极。 非易失性存储器件表现出优异的耐久性和长期非挥发性。

    Aerosol silicon nanoparticles for use in semiconductor device fabrication
    2.
    发明授权
    Aerosol silicon nanoparticles for use in semiconductor device fabrication 有权

    公开(公告)号：US06586785B2

    公开(公告)日：2003-07-01

    申请号：US09895790

    申请日：2001-06-29

    申请人： Richard C. Flagan ,  Elizabeth Boer ,  Michele L. Ostraat ,  Harry A. Atwater ,  Lloyd D. Bell, II

    发明人： Richard C. Flagan ,  Elizabeth Boer ,  Michele L. Ostraat ,  Harry A. Atwater ,  Lloyd D. Bell, II

    IPC分类号： H01L2980

    CPC分类号： B82Y10/00 ,  G11C2216/06 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/66833

    摘要： A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particle sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably single crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 1012 to 1013 particles/cm2. A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less than 1011 atoms/cm2. The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behavior and long-term non-volatility.