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    Aerosol process for fabricating discontinuous floating gate microelectronic devices
    1.
    发明授权
    Aerosol process for fabricating discontinuous floating gate microelectronic devices 有权
    用于制造不连续浮栅微电子器件的气溶胶工艺

    公开(公告)号：US06723606B2

    公开(公告)日：2004-04-20

    申请号：US09895791

    申请日：2001-06-29

    申请人： Richard C. Flagan ,  Harry A. Atwater ,  Michele L. Ostraat

    发明人： Richard C. Flagan ,  Harry A. Atwater ,  Michele L. Ostraat

    IPC分类号： H01L218247

    CPC分类号： B82Y10/00 ,  G11C2216/06 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/66833

    摘要： A process for forming an aerosol of semiconductor nanoparticles includes pyrolyzing a semiconductor material-containing gas then quenching the gas being pyrolyzed to control particle size and prevent uncontrolled coagulation. The aerosol is heated to densify the particles and form crystalline nanoparticles. In an exemplary embodiment, the crystalline particles are advantageously classified by size using a differential mobility analyzer and particles having diameters outside of a pre-selected range of sizes, are removed from the aerosol. In an exemplary embodiment, the crystalline, classified and densified nanoparticles are oxidized to form a continuous oxide shell over the semiconductor core of the particles. The cores include a density which approaches the bulk density of the pure material of which the cores are composed and the majority of the particle cores are single crystalline. The oxidized particles are deposited on a substrate using thermophoretic, electrophoretic, or other deposition means. The deposited particles form a stratum or discontinuous monolayer of oxidized semiconductor particles. In an exemplary embodiment, the stratum is characterized by a uniform particle density on the order of 1012 to 1013 particles/cm2 and a tightly controlled range of particle sizes. A plurality of adjacent particles contact each other, but the oxide shells provide electrical isolation between the particles of the stratum. Clean processing techniques provide a density of foreign atom contamination of less than 1011 atoms/cm2. The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device exhibits excellent endurance behavior and long-term non-volatility.

    摘要翻译： 用于形成半导体纳米颗粒气溶胶的方法包括热解含半导体材料的气体，然后淬灭被热解的气体以控制粒度并防止不受控制的凝结。 将气溶胶加热以使颗粒致密化并形成结晶纳米颗粒。 在一个示例性实施方案中，结晶颗粒有利地使用差示迁移率分析仪的大小进行分类，并且从气溶胶中除去具有预定尺寸范围外的直径的颗粒。 在一个示例性实施方案中，结晶，分级和致密的纳米颗粒被氧化以在颗粒的半导体芯上形成连续的氧化物壳。 核心包括接近构成芯的纯材料的体积密度的密度，并且大部分颗粒芯是单晶的。 使用热泳，电泳或其他沉积方法将氧化的颗粒沉积在基底上。 沉积的颗粒形成氧化半导体颗粒的层或不连续的单层。 在一个示例性实施方案中，层的特征在于具有约10 12至10 13颗粒/ cm 2的均匀颗粒密度和颗粒尺寸的严格控制范围。 多个相邻的颗粒彼此接触，但是氧化物壳在层的颗粒之间提供电隔离。 清洁处理技术提供小于10 11个原子/ cm 2的外来原子污染物的密度。 该层有利地用作诸如MOSFET之类的非易失性存储器件中的浮动栅极。 非易失性存储器件表现出优异的耐久性和长期非挥发性。

    Aerosol silicon nanoparticles for use in semiconductor device fabrication
    2.
    发明授权
    Aerosol silicon nanoparticles for use in semiconductor device fabrication 有权

    公开(公告)号：US06586785B2

    公开(公告)日：2003-07-01

    申请号：US09895790

    申请日：2001-06-29

    申请人： Richard C. Flagan ,  Elizabeth Boer ,  Michele L. Ostraat ,  Harry A. Atwater ,  Lloyd D. Bell, II

    发明人： Richard C. Flagan ,  Elizabeth Boer ,  Michele L. Ostraat ,  Harry A. Atwater ,  Lloyd D. Bell, II

    IPC分类号： H01L2980

    CPC分类号： B82Y10/00 ,  G11C2216/06 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/66833

    摘要： A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particle sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably single crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 1012 to 1013 particles/cm2. A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less than 1011 atoms/cm2. The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behavior and long-term non-volatility.

    Virtual substrates for epitaxial growth and methods of making the same
    3.
    发明授权
    Virtual substrates for epitaxial growth and methods of making the same 有权
    用于外延生长的虚拟衬底及其制造方法

    公开(公告)号：US09455146B2

    公开(公告)日：2016-09-27

    申请号：US12928762

    申请日：2010-12-17

    申请人： Harry A. Atwater ,  Marina S. Leite ,  Emily C. Warmann ,  Dennis M. Callahan

    发明人： Harry A. Atwater ,  Marina S. Leite ,  Emily C. Warmann ,  Dennis M. Callahan

    IPC分类号： H01L29/06 ,  H01L21/18

    CPC分类号： H01L21/187

    摘要： A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

    摘要翻译： 虚拟衬底包括手柄支撑件和手柄支撑件上的应变消除的单晶层。 制造虚拟衬底的方法包括在初始生长衬底上生长相干应变的单晶层，去除初始生长衬底以减轻单晶层上的应变，并将应变消除的单晶层施加在手柄支撑件上 。

    MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS
    5.
    发明申请
    MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS 审中-公开
    微电子结构包括铜氧化物半导体并具有改进的P-N异质结

    公开(公告)号：US20130298985A1

    公开(公告)日：2013-11-14

    申请号：US13876652

    申请日：2011-09-29

    申请人： Davis S. Darvish ,  Harry A. Atwater

    发明人： Davis S. Darvish ,  Harry A. Atwater

    IPC分类号： H01L21/02 ,  H01L31/0336 ,  H01L29/24

    CPC分类号： H01L21/02565 ,  C30B23/04 ,  C30B29/16 ,  H01L29/242 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/072 ,  H01L33/005 ,  Y02E10/50

    摘要： The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.

    摘要翻译： 本发明提供了制造更高质量p-n异质结的策略，其中掺入了氧化亚铜和适用于形成异质结的另一种材料。 当纳入微电子器件时，预期这些改进的异质结将提供改进的微电子特性，例如改善的缺陷密度，特别是在pn异质结处的较低的界面缺陷密度，导致改进的微电子器件，例如具有改进的开路电压的太阳能电池器件， 填充因子，效率，电流密度等。

    Group IIB/VA semiconductors suitable for use in photovoltaic devices
    7.
    发明授权
    Group IIB/VA semiconductors suitable for use in photovoltaic devices 有权
    适用于光伏器件的IIB / VA系列半导体

    公开(公告)号：US08507307B2

    公开(公告)日：2013-08-13

    申请号：US13160681

    申请日：2011-06-15

    申请人： Gregory M. Kimball ,  Marty W. DeGroot ,  Nathan S. Lewis ,  Harry A. Atwater

    发明人： Gregory M. Kimball ,  Marty W. DeGroot ,  Nathan S. Lewis ,  Harry A. Atwater

    IPC分类号： H01L31/109

    CPC分类号： H01L31/18 ,  H01L31/032 ,  H01L31/0321 ,  H01L31/068 ,  Y02E10/547

    摘要： The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).

    摘要翻译： 本发明涉及装置，特别是掺入了IIB / VA族半导体的光伏器件，例如Zn和/或Cd中的一种或多种的磷化物，砷化物和/或锑化物。 特别地，本发明涉及其中通过使IIB / VA族半导体材料与至少一种含金属物质（以下称为共反应性物质）反应来改善半导体材料的电子性能的方法，产物及其前体 物种），其与并入作为晶格取代基的IIB / VA族半导体中的至少一种VA族物质具有充分的共反应性（认识到相同的和/或另一种VA族也可以并入IIB / VA族 半导体以其他方式，例如，作为掺杂剂等）。

    Ferroelectric nanophotonic materials and devices
    10.
    发明授权
    Ferroelectric nanophotonic materials and devices 有权
    铁电纳米光子材料和器件

    公开(公告)号：US07346248B2

    公开(公告)日：2008-03-18

    申请号：US11497935

    申请日：2006-08-01

    申请人： Harry A. Atwater ,  Kaushik Bhattacharya ,  Kaushik Dayal ,  Matthew Dicken ,  Demetri Psaltis ,  Axel Scherer ,  Guruswami Ravichandran

    发明人： Harry A. Atwater ,  Kaushik Bhattacharya ,  Kaushik Dayal ,  Matthew Dicken ,  Demetri Psaltis ,  Axel Scherer ,  Guruswami Ravichandran

    IPC分类号： G02B6/00

    CPC分类号： G02F1/03 ,  B82Y20/00 ,  G02B6/3574 ,  G02F2202/32

    摘要： Systems and methods for manipulating light with tunable ferroelectric photonic devices. Devices having tunable properties that exhibit photonic bandgap behavior are fabricated from ferroelectric materials. Apparatus is provided to apply tuning signals to the ferroelectric material using one or more of electric fields, mechanical forces, optical fields, and thermal fields. Control circuitry is provided to generate the control signals needed to apply the tuning signals. Input and output ports are provided to allow input signals to be received and to provide output signals. In some cases, a feedback loop is provided to use a portion of the output signal as a diagnostic signal for control of the operation of the device within an acceptable range. It is expected that ferroelectric photonic devices operating according to principles of the invention will be useful for a wide variety of applications, including optical switching, optical modulation, optical computing, and performing logic optically.

    摘要翻译： 用可调谐铁电光子器件操纵光的系统和方法。 具有光子带隙特性的具有可调谐特性的器件由铁电材料制成。 提供了使用电场，机械力，光场和热场中的一个或多个来将调谐信号施加到铁电材料的装置。 提供控制电路以产生应用调谐信号所需的控制信号。 提供输入和输出端口以允许接收输入信号并提供输出信号。 在一些情况下，提供反馈回路以使用输出信号的一部分作为用于在可接受范围内控制装置的操作的诊断信号。 期望根据本发明的原理操作的铁电光子器件对于各种应用（包括光学开关，光学调制，光学计算和光学执行逻辑）将是有用的。