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公开(公告)号：US10532481B2
公开(公告)日：2020-01-14
申请号：US14951595
申请日：2015-11-25
摘要： A punch tool for forming holes or apertures in workpieces. The tool includes a primary cylinder containing a movable ram and a secondary cylinder containing another movable ram. The primary and secondary cylinders are in hydraulic communication with each other. The primary cylinder is releasably engageable with a powered press tool and various dies or punches can be attached at the secondary cylinder. Systems of powered tools and the punch tools, and methods of forming holes in workpieces using the punch tools.
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公开(公告)号：US20170144320A1
公开(公告)日：2017-05-25
申请号：US14951595
申请日：2015-11-25
IPC分类号： B26D5/12
CPC分类号： B26D5/12 , B21D28/34 , B21D28/343 , B25F5/005
摘要： A punch tool for forming holes or apertures in workpieces is described. The tool includes a primary cylinder containing a movable ram and a secondary cylinder containing another movable ram. The primary and secondary cylinders are in hydraulic communication with each other. The primary cylinder is releasably engageable with a powered press tool and various dies or punches can be attached at the secondary cylinder. Also described are systems of powered tools and the punch tools, and methods of forming holes in workpieces using the punch tools.
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公开(公告)号：US20160268483A1
公开(公告)日：2016-09-15
申请号：US15064491
申请日：2016-03-08
CPC分类号： H01L33/502 , B82Y20/00 , B82Y40/00 , Y10S977/774 , Y10S977/824 , Y10S977/893 , Y10S977/95
摘要： Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.
摘要翻译： 制造半导体结构，包括从第一半导体材料形成纳米晶核，从至少部分地围绕纳米晶核的第二不同的半导体材料形成纳米晶体壳，其中纳米晶核和纳米晶体壳形成量子点。 制造还涉及形成封装量子点的绝缘体层以产生涂覆的量子点，并且使用原子层沉积（ALD）工艺在涂覆的量子点上形成额外的绝缘体层。
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4.发明申请公开(公告)号：US20170271563A1
公开(公告)日：2017-09-21
申请号：US15458882
申请日：2017-03-14
申请人： Chris Durgan , Matthew Bertram , Matthew J. Carillo , Paul Archer
发明人： Chris Durgan , Matthew Bertram , Matthew J. Carillo , Paul Archer
CPC分类号： H01L33/502 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/025 , C09K11/883 , Y10S977/774 , Y10S977/824 , Y10S977/892 , Y10S977/896 , Y10S977/95
摘要： Techniques and mechanisms for synthesizing quantum dot structures. In an embodiment, a first reaction is performed to dissolve a precursor of a semiconductor material, wherein water is created as a by-product of the first reaction. Some or all of the water is removed and another chemical compound is added, wherein the chemical compound is a primary alcohol or a 1,2-diol. After the addition of the chemical compound, a second reaction is performed to grow at least some nanocrystalline portion of the quantum dot. In another embodiment, the chemical compound is 1,2-hexanediol, 1,2-dodecanediol or 1-octadecanol.
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