公开(公告)号：US08992691B2

公开(公告)日：2015-03-31

申请号：US13080097

申请日：2011-04-05

申请人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, Jr.

发明人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, Jr.

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67057 ,  G01N27/4161 ,  H01L21/02052 ,  H01L21/67017

摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

摘要翻译： 在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。 监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。 触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。 基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。 在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

公开(公告)号：US06584989B2

公开(公告)日：2003-07-01

申请号：US09836039

申请日：2001-04-17

申请人： Charles J. Taft ,  Kenneth J. McCullough ,  George F. Ouimet ,  David L. Rath ,  Robert W. Zigner, Jr.

发明人： Charles J. Taft ,  Kenneth J. McCullough ,  George F. Ouimet ,  David L. Rath ,  Robert W. Zigner, Jr.

IPC分类号： B08B300

CPC分类号： H01L21/02071 ,  B08B3/00 ,  C11D11/0047 ,  G05D21/02 ,  Y10S134/902

摘要： An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.