公开(公告)号：US06584989B2

公开(公告)日：2003-07-01

申请号：US09836039

申请日：2001-04-17

申请人： Charles J. Taft ,  Kenneth J. McCullough ,  George F. Ouimet ,  David L. Rath ,  Robert W. Zigner, Jr.

发明人： Charles J. Taft ,  Kenneth J. McCullough ,  George F. Ouimet ,  David L. Rath ,  Robert W. Zigner, Jr.

IPC分类号： B08B300

CPC分类号： H01L21/02071 ,  B08B3/00 ,  C11D11/0047 ,  G05D21/02 ,  Y10S134/902

摘要： An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.

公开(公告)号：US08992691B2

公开(公告)日：2015-03-31

申请号：US13080097

申请日：2011-04-05

申请人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, Jr.

发明人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, Jr.

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67057 ,  G01N27/4161 ,  H01L21/02052 ,  H01L21/67017

摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

摘要翻译： 在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。 监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。 触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。 基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。 在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

公开(公告)号：US20120255577A1

公开(公告)日：2012-10-11

申请号：US13080097

申请日：2011-04-05

申请人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, JR.

发明人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, JR.

IPC分类号： C23G1/36 ,  B08B3/10

CPC分类号： H01L21/67057 ,  G01N27/4161 ,  H01L21/02052 ,  H01L21/67017

摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

摘要翻译： 在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。 监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。 触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。 基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。 在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

公开(公告)号：US06927393B2

公开(公告)日：2005-08-09

申请号：US10320835

申请日：2002-12-16

申请人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

发明人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

IPC分类号： G01N21/35 ,  G01J5/02

CPC分类号： G01N21/359 ,  G01N21/3504

摘要： A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

摘要翻译： 提供了一种用于半导体制造工艺的工艺参数的原位监测和分析的方法和装置，包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量，并且确定压力容器中的流体的组成，允许用户基于测量的组成来控制工艺参数。

公开(公告)号：US06736906B2

公开(公告)日：2004-05-18

申请号：US10120309

申请日：2002-04-10

申请人： John M. Cotte ,  Matteo Flotta ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John M. Cotte ,  Matteo Flotta ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： B08B300

CPC分类号： B08B7/0021 ,  B08B3/10 ,  B08B13/00

摘要： A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.

摘要翻译： 一种用于处理液化液体室中的工件的工件保持器。 在一个实施例中，工件保持器包括具有外壁和在外壁上的至少一个流体引导件的圆柱形旋转器。 旋转器适于旋转并提供流过旋转器的第一端的流体流，并且适于提供垂直于旋转体的第一端的表面的流体流动和混合。 固定装置联接到转子的第一端，用于将工件固定到转子的第一端。

公开(公告)号：US08388758B2

公开(公告)日：2013-03-05

申请号：US11866255

申请日：2007-10-02

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

IPC分类号： B08B7/00

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

摘要翻译： 一种表面清洁装置，包括腔室和热转印装置。 该室能够在其中保持半导体结构。 热传递装置连接到腔室。 热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。 热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。 当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。

公开(公告)号：US08828143B2

公开(公告)日：2014-09-09

申请号：US11866232

申请日：2007-10-02

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

IPC分类号： B08B3/10 ,  B08B7/04 ,  H01L21/67 ,  B08B7/00 ,  H01L21/02

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

摘要翻译： 一种表面清洁装置，包括腔室和热转印装置。 该室能够在其中保持半导体结构。 热传递装置连接到腔室。 热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。 热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。 当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。

公开(公告)号：US20090235955A1

公开(公告)日：2009-09-24

申请号：US11866255

申请日：2007-10-02

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

IPC分类号： B08B3/10

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

摘要翻译： 一种表面清洁装置，包括腔室和热转印装置。 该室能够在其中保持半导体结构。 热传递装置连接到腔室。 热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。 热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。 当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。

公开(公告)号：US07288155B2

公开(公告)日：2007-10-30

申请号：US11128022

申请日：2005-05-12

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario Goldfarb

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A method for cleaning a semiconductor structure including providing a chamber for holding the semiconductor structure and a dense phase fluid, providing a thermal transfer device having a thermal transfer surface, connecting the thermal transfer device to the chamber, placing the semiconductor structure in the chamber in contact with the thermal transfer surface and thermally cycling the thermal transfer surface.

摘要翻译： 一种用于清洁半导体结构的方法，包括提供用于保持半导体结构的腔室和致密相流体，提供具有热转印表面的热转印装置，将热转印装置连接到腔室，将半导体结构放置在腔室中 与热转印表面接触并热循环热转印表面。

公开(公告)号：US06997197B2

公开(公告)日：2006-02-14

申请号：US10318632

申请日：2002-12-13

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

IPC分类号： B08B7/00

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

摘要翻译： 一种表面清洁装置，包括腔室和热转印装置。 该室能够在其中保持半导体结构。 热传递装置连接到腔室。 热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。 热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。 当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。