公开(公告)号：US08388758B2

公开(公告)日：2013-03-05

申请号：US11866255

申请日：2007-10-02

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

IPC分类号： B08B7/00

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

摘要翻译： 一种表面清洁装置，包括腔室和热转印装置。 该室能够在其中保持半导体结构。 热传递装置连接到腔室。 热传递装置具有设置在室内的表面，用于接触半导体结构并控制与表面接触的半导体结构的温度。 热转印装置具有连接到表面的热控制模块，用于加热和冷却表面以使表面热循环。 当热再循环表面时，热控制模块会对表面产生实质上即时的热响应。

公开(公告)号：US20120255577A1

公开(公告)日：2012-10-11

申请号：US13080097

申请日：2011-04-05

申请人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, JR.

发明人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, JR.

IPC分类号： C23G1/36 ,  B08B3/10

CPC分类号： H01L21/67057 ,  G01N27/4161 ,  H01L21/02052 ,  H01L21/67017

摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

摘要翻译： 在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。 监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。 触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。 基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。 在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

公开(公告)号：US06838015B2

公开(公告)日：2005-01-04

申请号：US09945596

申请日：2001-09-04

申请人： John Michael Cotte ,  Dario L. Goldfarb ,  Pamela Jones ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John Michael Cotte ,  Dario L. Goldfarb ,  Pamela Jones ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： B08B7/00 ,  C11D7/08 ,  C11D7/26 ,  C11D7/28 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/02071 ,  B08B7/0021 ,  C11D7/08 ,  C11D7/265 ,  C11D7/28 ,  C11D7/50 ,  C11D11/0047 ,  H01L21/31116

摘要： A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.

公开(公告)号：US06683008B1

公开(公告)日：2004-01-27

申请号：US10299130

申请日：2002-11-19

申请人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： H01L21302

CPC分类号： G03F7/426 ,  G03F7/422 ,  H01L21/31133

摘要： A process of removing photoresist, previously subjected to ion implantation, from the surface of a workpiece. The process involves contacting the workpiece with a composition which includes liquid or supercritical carbon dioxide and between about 2% and about 20% of an alkanol having the structural formula CxX2x+1OH, where X is fluorine, hydrogen or mixtures thereof; and x is an integer of 1 to 8, said percentages being by volume, based on the total weight of the composition.

摘要翻译： 从工件表面除去预先进行离子注入的光致抗蚀剂的工艺。 该方法包括使工件与包含液体或超临界二氧化碳的组合物和约2％至约20％的具有结构式CxX2x + 1OH的链烷醇接触，其中X为氟，氢或其混合物; 并且x是1至8的整数，所述百分比是基于组合物的总重量的体积。

公开(公告)号：US06622507B2

公开(公告)日：2003-09-23

申请号：US09971515

申请日：2001-07-26

申请人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

发明人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

IPC分类号： F25D2312

CPC分类号： F16K99/0001 ,  F15B21/06 ,  F15C5/00 ,  F16K99/0057 ,  F25B2309/061 ,  F25B2400/15 ,  Y10T137/3662

摘要： An electromechanical device having a size no larger than about 10 microns utilizing a working fluid in the high pressure liquid or supercritical fluid state. A process of preparing the electromechanical device involves the introduction of the liquid or supercritical fluid therein which permits the retention of the working fluid in the liquid or supercritical state after introduction.

摘要翻译： 使用高压液体或超临界流体状态的工作流体的尺寸不大于约10微米的机电装置。 制备机电装置的过程包括在其中引入液体或超临界流体，其允许工作流体在引入之后保持在液体或超临界状态。

公开(公告)号：US06509136B1

公开(公告)日：2003-01-21

申请号：US09893267

申请日：2001-06-27

申请人： Dario L. Goldfarb ,  Kenneth John McCullough ,  David R. Medeiros ,  Wayne M. Moreau ,  John P. Simons ,  Charles J. Taft

发明人： Dario L. Goldfarb ,  Kenneth John McCullough ,  David R. Medeiros ,  Wayne M. Moreau ,  John P. Simons ,  Charles J. Taft

IPC分类号： G03F7027

CPC分类号： F26B21/14 ,  F26B5/005 ,  G03F7/162 ,  G03F7/168 ,  Y10S430/136

摘要： A process of drying a cast film polymeric disposed upon a workpiece. In this process a cast polymeric film, which includes a volatile organic compound therein, disposed on a workpiece, is contacted with an extraction agent which may be liquid carbon dioxide or supercritical carbon dioxide.

摘要翻译： 干燥设置在工件上的流延膜聚合物的方法。 在该方法中，设置在工件上的包含其中的挥发性有机化合物的浇铸聚合物膜与可以是液体二氧化碳或超临界二氧化碳的萃取剂接触。

公开(公告)号：US06454869B1

公开(公告)日：2002-09-24

申请号：US09893206

申请日：2001-06-27

申请人： John Michael Cotte ,  Dario L. Goldfarb ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John Michael Cotte ,  Dario L. Goldfarb ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： B08B304

CPC分类号： C11D3/3738 ,  B08B7/0021 ,  C11D1/004 ,  C11D3/18 ,  C11D3/245 ,  C11D11/0047 ,  G03F7/42 ,  H01L21/6704 ,  Y10S134/902

摘要： A process of cleaning semiconductor processing, handling and manufacturing equipment in which such equipment is contacted with a cleaning effective amount of liquid or supercritical carbon dioxide.

摘要翻译： 一种清洁半导体处理，处理和制造设备的方法，其中这种设备与清洁有效量的液体或超临界二氧化碳接触。

公开(公告)号：US07056837B2

公开(公告)日：2006-06-06

申请号：US10456299

申请日：2003-06-06

申请人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

发明人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249978 ,  Y10T428/24999 ,  H01L2924/00

摘要： A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

摘要翻译： 在将二氧化碳保持在液态或超临界状态的热力学条件下，通过使低介电常数聚合物与液体或超临界二氧化碳接触而形成的电介质材料，其中形成多孔产品。 因此，热力学条件改变为环境，其中二氧化碳从孔中逸出并被空气替代。

公开(公告)号：US06927393B2

公开(公告)日：2005-08-09

申请号：US10320835

申请日：2002-12-16

申请人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

发明人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

IPC分类号： G01N21/35 ,  G01J5/02

CPC分类号： G01N21/359 ,  G01N21/3504

摘要： A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

摘要翻译： 提供了一种用于半导体制造工艺的工艺参数的原位监测和分析的方法和装置，包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量，并且确定压力容器中的流体的组成，允许用户基于测量的组成来控制工艺参数。

公开(公告)号：US06834671B2

公开(公告)日：2004-12-28

申请号：US10743155

申请日：2003-12-22

申请人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

发明人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

IPC分类号： F16K1502

CPC分类号： F16K99/0001 ,  F15C5/00 ,  F16K15/023 ,  F16K99/0005 ,  F16K99/0007 ,  F16K99/0057 ,  F16K2099/0094 ,  Y10T137/7783 ,  Y10T137/7849 ,  Y10T137/7904

摘要： A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.

摘要翻译： 一种用于微机电结构装置（MEMS）的止回阀，并且特别涉及一种适于与旨在与构成工作流体的超临界流体一起使用的微机电结构装置结合使用的止回阀。 在优选实施例中，止回阀配备有包括可自由移动的塞子结构的旁通通道，其在阀的打开位置使得能够在高超大气压下进入超临界流体，并且在系统的填充之后，让 降至大气压力，使插头移动到永久性阀关闭位置。