公开(公告)号：US20090096503A1

公开(公告)日：2009-04-16

申请号：US12093482

申请日：2006-11-14

申请人： Peter Koellensperger ,  Rik W. De Doncker

发明人： Peter Koellensperger ,  Rik W. De Doncker

IPC分类号： H03K17/72 ,  H01L29/745

CPC分类号： H01L23/051 ,  H01L24/72 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12035 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00

摘要： A housing for a semiconductor device is disclosed. In an exemplary embodiment of the present invention, the housing comprises a semiconductor substrate that is arranged between two contact elements, one contact element forming an anode contact element and another contact element forming a cathode contact element, the semiconductor substrate having, on at least one surface, a gate electrode that is contacted by a gate contact element, the first contact element forming a surface arranged across from the gate electrode and at a distance from the gate electrode. Also included is at least one driver unit for generating a gate current, the driver unit comprising a first terminal that is contacted with the gate contact element, and a second terminal that is contacted with a first of the two contact elements. A housing according to an exemplary embodiment of the present invention additionally comprises a spring element arranged so that a spring force brings the gate contact element into pressure contact with the gate electrode and, at substantially the same time, the spring force brings the second terminal of the driver unit into pressure contact with the surface of the first contact element that is located across from the gate electrode.

摘要翻译： 公开了一种用于半导体器件的外壳。 在本发明的示例性实施例中，壳体包括布置在两个接触元件之间的半导体衬底，形成阳极接触元件的一个接触元件和形成阴极接触元件的另一接触元件，所述半导体衬底在至少一个 表面，与栅极接触元件接触的栅电极，所述第一接触元件形成从所述栅电极横向设置并与所述栅电极一定距离的表面。 还包括用于产生栅极电流的至少一个驱动器单元，所述驱动器单元包括与栅极接触元件接触的第一端子和与两个接触元件中的第一个接触的第二端子。 根据本发明的示例性实施例的壳体还包括弹簧元件，其布置成使得弹簧力使得栅极接触元件与栅电极压力接触，并且在基本上同时弹簧力使第二端子 所述驱动器单元与位于所述栅电极两侧的所述第一接触元件的表面压力接触。

公开(公告)号：US07943956B2

公开(公告)日：2011-05-17

申请号：US12093482

申请日：2006-11-14

申请人： Rik W. De Doncker ,  Peter Koellensperger

发明人： Rik W. De Doncker ,  Peter Koellensperger

IPC分类号： H01L29/66 ,  H01L21/00 ,  H03K17/72

CPC分类号： H01L23/051 ,  H01L24/72 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12035 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00

摘要： A housing for a semiconductor device is disclosed. In an exemplary embodiment of the present invention, the housing comprises a semiconductor substrate that is arranged between two contact elements, one contact element forming an anode contact element and another contact element forming a cathode contact element, the semiconductor substrate having, on at least one surface, a gate electrode that is contacted by a gate contact element, the first contact element forming a surface arranged across from the gate electrode and at a distance from the gate electrode. Also included is at least one driver unit for generating a gate current, the driver unit comprising a first terminal that is contacted with the gate contact element, and a second terminal that is contacted with a first of the two contact elements. A housing according to an exemplary embodiment of the present invention additionally comprises a spring element arranged so that a spring force brings the gate contact element into pressure contact with the gate electrode and, at substantially the same time, the spring force brings the second terminal of the driver unit into pressure contact with the surface of the first contact element that is located across from the gate electrode.

摘要翻译： 公开了一种用于半导体器件的外壳。 在本发明的示例性实施例中，壳体包括布置在两个接触元件之间的半导体衬底，形成阳极接触元件的一个接触元件和形成阴极接触元件的另一个接触元件，所述半导体衬底在至少一个 表面，与栅极接触元件接触的栅电极，所述第一接触元件形成从所述栅电极横向设置并与所述栅电极一定距离的表面。 还包括用于产生栅极电流的至少一个驱动器单元，所述驱动器单元包括与栅极接触元件接触的第一端子和与两个接触元件中的第一个接触的第二端子。 根据本发明的示例性实施例的壳体还包括弹簧元件，其布置成使得弹簧力使得栅极接触元件与栅电极压力接触，并且在基本上同时弹簧力使第二端子 所述驱动器单元与位于所述栅电极两侧的所述第一接触元件的表面压力接触。