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公开(公告)号：US20140354390A1
公开(公告)日：2014-12-04
申请号：US13978810
申请日：2012-02-06
IPC分类号： H01F29/04
摘要： The invention relates to a tap changer for voltage regulation, comprising semiconductor switch units (S1.1, . . . , S1.6; S2.1, . . . , S2.6) on a variable transformer having a regulating winding, wherein two parallel load branches (1, 2) are provided, in each of which several series-connected semiconductor switch units are arranged. Parts of the regulating winding (W1, W2, W3) and bridges (B1, B2) are provided alternately and run parallel between the two load branches, alternating such that by corresponding connection of the semiconductor switch units in both load branches, the parts of the regulating wiring can be operated arbitrarily in a subtractive and/or additive manner.
摘要翻译： 本发明涉及一种用于电压调节的分接开关，包括在具有调节绕组的可变变压器上的半导体开关单元（S1.1，...，S1.6; S2.1，...，S2.6），其中 提供了两个平行的负载分支（1,2），其中布置有几个串联的半导体开关单元。 调节绕组（W1，W2，W3）和桥（B1，B2）的部分交替地设置并且平行于两个负载分支之间交替，使得通过两个负载分支中的半导体开关单元的相应连接， 调节布线可以以减法和/或加法的方式任意操作。
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公开(公告)号：US07541814B2
公开(公告)日：2009-06-02
申请号：US10573510
申请日：2004-09-24
IPC分类号： G01N27/416
CPC分类号： G01R31/3662
摘要： A method and device for determining the charge of a battery, characterized in that a gain crossover frequency (f±) for an impedance of the battery excited by an alternating current signal is established, and the gain crossover frequency (f±) is assigned to the charge of the battery, whereby the gain crossover frequency (f±) is a frequency of the alternating current signal at which an imaginary portion of the impedance of the battery vanishes.
摘要翻译： 一种用于确定电池充电的方法和装置，其特征在于，建立由交流信号激励的电池的阻抗的增益交叉频率（f±），并将增益交越频率（f±）分配给 电池的充电，由此增益交叉频率（f±）是电池的阻抗的虚部消失的交流信号的频率。
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公开(公告)号：US20090096503A1
公开(公告)日：2009-04-16
申请号：US12093482
申请日：2006-11-14
IPC分类号： H03K17/72 , H01L29/745
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01058 , H01L2924/01068 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/12035 , H01L2924/1301 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： A housing for a semiconductor device is disclosed. In an exemplary embodiment of the present invention, the housing comprises a semiconductor substrate that is arranged between two contact elements, one contact element forming an anode contact element and another contact element forming a cathode contact element, the semiconductor substrate having, on at least one surface, a gate electrode that is contacted by a gate contact element, the first contact element forming a surface arranged across from the gate electrode and at a distance from the gate electrode. Also included is at least one driver unit for generating a gate current, the driver unit comprising a first terminal that is contacted with the gate contact element, and a second terminal that is contacted with a first of the two contact elements. A housing according to an exemplary embodiment of the present invention additionally comprises a spring element arranged so that a spring force brings the gate contact element into pressure contact with the gate electrode and, at substantially the same time, the spring force brings the second terminal of the driver unit into pressure contact with the surface of the first contact element that is located across from the gate electrode.
摘要翻译： 公开了一种用于半导体器件的外壳。 在本发明的示例性实施例中，壳体包括布置在两个接触元件之间的半导体衬底，形成阳极接触元件的一个接触元件和形成阴极接触元件的另一接触元件，所述半导体衬底在至少一个 表面，与栅极接触元件接触的栅电极，所述第一接触元件形成从所述栅电极横向设置并与所述栅电极一定距离的表面。 还包括用于产生栅极电流的至少一个驱动器单元，所述驱动器单元包括与栅极接触元件接触的第一端子和与两个接触元件中的第一个接触的第二端子。 根据本发明的示例性实施例的壳体还包括弹簧元件，其布置成使得弹簧力使得栅极接触元件与栅电极压力接触，并且在基本上同时弹簧力使第二端子 所述驱动器单元与位于所述栅电极两侧的所述第一接触元件的表面压力接触。
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公开(公告)号：US07943956B2
公开(公告)日：2011-05-17
申请号：US12093482
申请日：2006-11-14
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01058 , H01L2924/01068 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/12035 , H01L2924/1301 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： A housing for a semiconductor device is disclosed. In an exemplary embodiment of the present invention, the housing comprises a semiconductor substrate that is arranged between two contact elements, one contact element forming an anode contact element and another contact element forming a cathode contact element, the semiconductor substrate having, on at least one surface, a gate electrode that is contacted by a gate contact element, the first contact element forming a surface arranged across from the gate electrode and at a distance from the gate electrode. Also included is at least one driver unit for generating a gate current, the driver unit comprising a first terminal that is contacted with the gate contact element, and a second terminal that is contacted with a first of the two contact elements. A housing according to an exemplary embodiment of the present invention additionally comprises a spring element arranged so that a spring force brings the gate contact element into pressure contact with the gate electrode and, at substantially the same time, the spring force brings the second terminal of the driver unit into pressure contact with the surface of the first contact element that is located across from the gate electrode.
摘要翻译： 公开了一种用于半导体器件的外壳。 在本发明的示例性实施例中，壳体包括布置在两个接触元件之间的半导体衬底，形成阳极接触元件的一个接触元件和形成阴极接触元件的另一个接触元件，所述半导体衬底在至少一个 表面，与栅极接触元件接触的栅电极，所述第一接触元件形成从所述栅电极横向设置并与所述栅电极一定距离的表面。 还包括用于产生栅极电流的至少一个驱动器单元，所述驱动器单元包括与栅极接触元件接触的第一端子和与两个接触元件中的第一个接触的第二端子。 根据本发明的示例性实施例的壳体还包括弹簧元件，其布置成使得弹簧力使得栅极接触元件与栅电极压力接触，并且在基本上同时弹簧力使第二端子 所述驱动器单元与位于所述栅电极两侧的所述第一接触元件的表面压力接触。
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