公开(公告)号：US08497141B2

公开(公告)日：2013-07-30

申请号：US13137339

申请日：2011-08-08

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

IPC分类号： H01L21/66 ,  H01L33/10

CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

公开(公告)号：US08022424B2

公开(公告)日：2011-09-20

申请号：US11806884

申请日：2007-06-05

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

IPC分类号： H01L33/14

CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

公开(公告)号：US07791085B2

公开(公告)日：2010-09-07

申请号：US11604514

申请日：2006-11-27

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Yuji Masui

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Yuji Masui

IPC分类号： H01L29/161

CPC分类号： H01L31/173 ,  H01L31/022408

摘要： Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.

摘要翻译： 这里公开了一种半导体发光装置，其包括：半导体发光器件，其具有包括发光区域的第一半导体层叠结构和允许从发光区域发射的光在层叠方向上通过其出射的光出射窗 ; 光发射部，设置在与所述发光区域对应的区域中; 设置在所述第一半导体层叠结构体的与所述发光区域的外周区域对应的区域中的金属部件; 以及具有第二半导体层叠结构的半导体光检测器，该第二半导体叠层结构包括用于吸收从层叠方向入射的一部分光的光吸收层。 在该装置中，半导体发光器件，包括透光部分和金属部分的层以及半导体光检测器以按顺序层叠的方式一体地形成。

公开(公告)号：US20070278475A1

公开(公告)日：2007-12-06

申请号：US11802460

申请日：2007-05-23

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

IPC分类号： H01L29/06

CPC分类号： H01S5/0264 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/18311 ,  H01S2301/18

摘要： A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.

摘要翻译： 半导体发光器件包括：依次包括第一导电类型半导体层，包括发光区域的有源层和第二导电类型半导体层的半导体发光元件; 具有透射特性的滤光器，其中在与所述半导体发光元件输出的光的感应发光的光轴平行的方向上的透射率高于在与所述光轴不同的方向上的透射率的透射率; 以及包含光吸收层的半导体光电检测器，所述光吸收层吸收通过所述滤光器的光的一部分，其中所述滤光器和所述半导体光电检测器依次层叠在所述半导体发光元件的第二导电类型半导体层上， 并且以半导体发光元件形成为一个单元。

公开(公告)号：US08035187B2

公开(公告)日：2011-10-11

申请号：US12362066

申请日：2009-01-29

申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01L31/00

CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

公开(公告)号：US20090194837A1

公开(公告)日：2009-08-06

申请号：US12362066

申请日：2009-01-29

申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

公开(公告)号：US20110294236A1

公开(公告)日：2011-12-01

申请号：US13137339

申请日：2011-08-08

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

IPC分类号： H01L21/66

CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

摘要翻译： 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。

公开(公告)号：US07873092B2

公开(公告)日：2011-01-18

申请号：US11980459

申请日：2007-10-31

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Rintaro Koda ,  Tomoyuki Oki

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Rintaro Koda ,  Tomoyuki Oki

IPC分类号： H01S5/00

CPC分类号： H01S5/0264 ,  H01L31/101 ,  H01S5/0683 ,  H01S5/18311 ,  H01S2301/02

摘要： The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

摘要翻译： 本发明提供一种实现改进的光检测精度的激光二极管。 激光二极管包括其中依次包括第一导电类型，有源层和第二导电类型的第二半导体层的第一半导体层的堆叠结构; 光电检测层; 以及设置在从有源层输出的光的驻波的波腹或节点的对应位置上的多个光吸收层。

公开(公告)号：US07423294B2

公开(公告)日：2008-09-09

申请号：US11802460

申请日：2007-05-23

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

IPC分类号： H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01S5/0264 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/18311 ,  H01S2301/18

摘要： A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.

摘要翻译： 半导体发光器件包括：依次包括第一导电类型半导体层，包括发光区域的有源层和第二导电类型半导体层的半导体发光元件; 具有透射特性的滤光器，其中在与所述半导体发光元件输出的光的感应发光的光轴平行的方向上的透射率高于在与所述光轴不同的方向上的透射率的透射率; 以及包含光吸收层的半导体光电检测器，所述光吸收层吸收通过所述滤光器的光的一部分，其中所述滤光器和所述半导体光电检测器依次层叠在所述半导体发光元件的第二导电类型半导体层上， 并且以半导体发光元件形成为一个单元。

公开(公告)号：US20090032908A1

公开(公告)日：2009-02-05

申请号：US11806884

申请日：2007-06-05

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

IPC分类号： H01L29/06 ,  H01L21/66

CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

摘要翻译： 提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。 在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。 然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。 由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。