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    Semiconductor light receiving element and optical communication system
    1.
    发明授权
    Semiconductor light receiving element and optical communication system 有权
    半导体光接收元件和光通信系统

    公开(公告)号：US08035187B2

    公开(公告)日：2011-10-11

    申请号：US12362066

    申请日：2009-01-29

    申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

    发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

    IPC分类号： H01L31/00

    CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

    摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

    摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

    Laser diode
    3.
    发明授权
    Laser diode 失效
    激光二极管

    公开(公告)号：US07873092B2

    公开(公告)日：2011-01-18

    申请号：US11980459

    申请日：2007-10-31

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Rintaro Koda ,  Tomoyuki Oki

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Rintaro Koda ,  Tomoyuki Oki

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0264 ,  H01L31/101 ,  H01S5/0683 ,  H01S5/18311 ,  H01S2301/02

    摘要： The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

    摘要翻译： 本发明提供一种实现改进的光检测精度的激光二极管。 激光二极管包括其中依次包括第一导电类型，有源层和第二导电类型的第二半导体层的第一半导体层的堆叠结构; 光电检测层; 以及设置在从有源层输出的光的驻波的波腹或节点的对应位置上的多个光吸收层。

    Light-emitting element and method for manufacturing the same
    6.
    发明授权
    Light-emitting element and method for manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08761221B2

    公开(公告)日：2014-06-24

    申请号：US12078681

    申请日：2008-04-03

    申请人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    摘要翻译： 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

    Semiconductor light emitting device
    7.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US07965750B2

    公开(公告)日：2011-06-21

    申请号：US12385811

    申请日：2009-04-21

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

    IPC分类号： H01S5/00 ,  H01S3/094

    CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

    摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

    摘要翻译： 半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。 空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电类型的第一接触层，第一导电类型的第一接触层 导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。 第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

    Semiconductor light emitting apparatus
    9.
    发明授权
    Semiconductor light emitting apparatus 有权
    半导体发光装置

    公开(公告)号：US07791085B2

    公开(公告)日：2010-09-07

    申请号：US11604514

    申请日：2006-11-27

    申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Yuji Masui

    发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Yuji Masui

    IPC分类号： H01L29/161

    CPC分类号： H01L31/173 ,  H01L31/022408

    摘要： Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.

    摘要翻译： 这里公开了一种半导体发光装置，其包括：半导体发光器件，其具有包括发光区域的第一半导体层叠结构和允许从发光区域发射的光在层叠方向上通过其出射的光出射窗 ; 光发射部，设置在与所述发光区域对应的区域中; 设置在所述第一半导体层叠结构体的与所述发光区域的外周区域对应的区域中的金属部件; 以及具有第二半导体层叠结构的半导体光检测器，该第二半导体叠层结构包括用于吸收从层叠方向入射的一部分光的光吸收层。 在该装置中，半导体发光器件，包括透光部分和金属部分的层以及半导体光检测器以按顺序层叠的方式一体地形成。

    Semiconductor light-emitting device
    10.
    发明申请
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US20070278475A1

    公开(公告)日：2007-12-06

    申请号：US11802460

    申请日：2007-05-23

    申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

    发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

    IPC分类号： H01L29/06

    CPC分类号： H01S5/0264 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/18311 ,  H01S2301/18

    摘要： A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.

    摘要翻译： 半导体发光器件包括：依次包括第一导电类型半导体层，包括发光区域的有源层和第二导电类型半导体层的半导体发光元件; 具有透射特性的滤光器，其中在与所述半导体发光元件输出的光的感应发光的光轴平行的方向上的透射率高于在与所述光轴不同的方向上的透射率的透射率; 以及包含光吸收层的半导体光电检测器，所述光吸收层吸收通过所述滤光器的光的一部分，其中所述滤光器和所述半导体光电检测器依次层叠在所述半导体发光元件的第二导电类型半导体层上， 并且以半导体发光元件形成为一个单元。