公开(公告)号：US06593181B2

公开(公告)日：2003-07-15

申请号：US09838870

申请日：2001-04-20

申请人： Robert Benjamin Laibowitz ,  John David Baniecki ,  Johannes Georg Bednorz ,  Jean-Pierre A. Locquet

发明人： Robert Benjamin Laibowitz ,  John David Baniecki ,  Johannes Georg Bednorz ,  Jean-Pierre A. Locquet

IPC分类号： H01L218242

CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/02351 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/31155 ,  H01L21/31691 ,  H01L27/1085 ,  H01L29/517

摘要： A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

摘要翻译： 本文提出了一种用于调整高k薄层钙钛矿材料的性能的方法，以及包括这种绝缘体的装置。 该方法包括以下步骤：首先基本完成装置的制造，该装置包含多晶形式的高k绝缘体。 诸如电容器或FET的器件经历了制造线的典型的高温制造工艺。 在下一步骤中，器件以这种剂量和能量原位离子注入，以将一部分多晶材料转化为无定形材料状态，从而调整绝缘体的性能。 转化为无定形材料的多晶材料的分数可能为1.该工艺可应用于许多电子器件和一些光学器件。 该方法产生新颖的钙钛矿薄层材料和用这种材料制造的新型器件。

公开(公告)号：US06717199B2

公开(公告)日：2004-04-06

申请号：US10408069

申请日：2003-04-04

申请人： Robert Benjamin Laibowitz ,  John David Baniecki ,  Johannes Georg Bednorz ,  Jean-Pierre A. Locquet

发明人： Robert Benjamin Laibowitz ,  John David Baniecki ,  Johannes Georg Bednorz ,  Jean-Pierre A. Locquet

IPC分类号： H01L2976

CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/02351 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/31155 ,  H01L21/31691 ,  H01L27/1085 ,  H01L29/517

摘要： A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

摘要翻译： 本文提出了一种用于调整高k薄层钙钛矿材料的性能的方法，以及包括这种绝缘体的装置。 该方法包括以下步骤：首先基本完成装置的制造，该装置包含多晶形式的高k绝缘体。 诸如电容器或FET的器件经历了制造线的典型的高温制造工艺。 在下一步骤中，器件以这种剂量和能量原位离子注入，以将一部分多晶材料转化为无定形材料状态，从而调整绝缘体的性能。 转化为无定形材料的多晶材料的分数可能为1.该工艺可应用于许多电子器件和一些光学器件。 该方法产生新颖的钙钛矿薄层材料和用这种材料制造的新型器件。