Imager with reduced FET photoresponse and high integrity contact via
    1.
    发明授权
    Imager with reduced FET photoresponse and high integrity contact via 有权
    具有降低的FET光响应和高完整性接触通孔的成像器

    公开(公告)号:US06396046B1

    公开(公告)日:2002-05-28

    申请号:US09643228

    申请日:2000-08-22

    IPC分类号: H01L2700

    摘要: A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.

    摘要翻译: 公开了一种设置在辐射成像器的开关装置(例如TFT)的感光区域上的光阻材料。 光阻止材料防止从闪烁体发出的光子光子进入开关装置并被吸收。 因此,成像器中的串扰和噪声被降低。 此外,避免了非线性像素响应和传递到读出电子装置的寄生信号。 可选地,包含相同的光块材料的不透明盖可以包括在成像器结构中。 帽盖覆盖填充有公共电极并位于成像器的接触指状区域中的接触通孔。 从而在随后的处理期间保持填充的通孔的完整性。 还公开了包含这些结构的辐射成像仪。

    Solid state imager having gated photodiodes and method for making same
    2.
    发明授权
    Solid state imager having gated photodiodes and method for making same 有权
    具有门控光电二极管的固态成像器及其制造方法

    公开(公告)号:US06724010B1

    公开(公告)日:2004-04-20

    申请号:US09632106

    申请日:2000-08-03

    IPC分类号: H01L310392

    摘要: A solid state imager is provided that comprises an imaging array of gated photodiodes. The imager comprises a plurality of photosensor pixels arranged in a pixel array, and each of the photosensor pixels includes a photodiode having a sidewall, the sidewall having a gate dielectric layer disposed thereon, and a field plate disposed around the photodiode body. The field plate comprises amorphous silicon disposed on the gate dielectric layer and extends substantially completely around the sidewall of said photodiode. The field plate is electrically coupled to the common electrode of the imaging array so that the field plate creates an electric field around the photodiode body in correspondence with the potential of said common electrode. A method of fabricating the gated photodiode array is also provided.

    摘要翻译: 提供固态成像器,其包括门控光电二极管的成像阵列。 成像器包括排列在像素阵列中的多个光电传感器像素,并且每个光传感器像素包括具有侧壁的光电二极管,该侧壁具有设置在其上的栅介质层,以及设置在光电二极管主体周围的场板。 场板包括设置在栅极电介质层上并且基本上完全围绕所述光电二极管的侧壁延伸的非晶硅。 场板电耦合到成像阵列的公共电极,使得场板与所述公共电极的电位相对应地在光电二极管主体周围产生电场。 还提供了一种制造门控光电二极管阵列的方法。

    Corrosion resistant imager
    3.
    发明授权

    公开(公告)号:US06392254B1

    公开(公告)日:2002-05-21

    申请号:US09468895

    申请日:1999-12-22

    IPC分类号: H01L2904

    摘要: A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.

    Radiation imager with discontinuous dielectric
    4.
    发明授权
    Radiation imager with discontinuous dielectric 失效
    具有不连续电介质的辐射成像仪

    公开(公告)号:US5777355A

    公开(公告)日:1998-07-07

    申请号:US772446

    申请日:1996-12-23

    CPC分类号: H01L27/14643 H01L27/14623

    摘要: A radiation imager having a plurality of photosensitive elements has a two-tier passivation layer disposed between the top patterned common electrode contact layer and respective photosensor islands. The top passivation layer is a polymer bridge member disposed between adjacent photodiodes so as to isolate defects such as moisture-induced leakage in any bridge island layer to the two adjacent photodiodes spanned by the bridge island.

    摘要翻译: 具有多个感光元件的辐射成像器具有设置在顶部图案化的公共电极接触层和相应的光电传感器岛之间的双层钝化层。 顶部钝化层是设置在相邻的光电二极管之间的聚合物桥构件,以便将任何桥岛层中的水分诱发泄漏的缺陷隔离到由桥岛跨越的两个相邻的光电二极管。

    Corrosion resistant imager
    5.
    发明授权

    公开(公告)号:US06465861B1

    公开(公告)日:2002-10-15

    申请号:US09468896

    申请日:1999-12-22

    IPC分类号: H01L3100

    摘要: A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.

    Radiation imaging with continuous polymer layer for scintillator
    6.
    发明授权
    Radiation imaging with continuous polymer layer for scintillator 失效
    用于闪烁体的连续聚合物层的辐射成像

    公开(公告)号:US06414315B1

    公开(公告)日:2002-07-02

    申请号:US09411299

    申请日:1999-10-04

    IPC分类号: G01T1202

    CPC分类号: G01T1/2018

    摘要: A radiation imager includes a light sensitive imaging array, a barrier layer formed over the light sensitive imaging array, a continuous polymer layer formed over the barrier layer, and a scintillator formed directly on the continuous polymer layer. The continuous polymer layer improves the adherence of the scintillator by reducing delamination especially under adverse environmental conditions.

    摘要翻译: 辐射成像仪包括光敏成像阵列,在光敏成像阵列上形成的阻挡层,形成在阻挡层上的连续聚合物层,以及直接形成在连续聚合物层上的闪烁体。 连续聚合物层通过减少分层改善闪烁体的粘附,特别是在不利的环境条件下。

    Corrosion resistant imager
    7.
    发明授权
    Corrosion resistant imager 失效
    耐腐蚀成像仪

    公开(公告)号:US06359291B1

    公开(公告)日:2002-03-19

    申请号:US09468897

    申请日:1999-12-22

    IPC分类号: H01L31030

    摘要: A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.

    摘要翻译: 公开了一种辐射成像仪,其通过接触焊盘腐蚀,防护环腐蚀或光电二极管泄漏而抵抗由于水分引起的劣化。 公开了一种大面积成像器的接触焊盘,其形成为三个不同的和电连接的区域。 接触垫区域的结构形成可靠的接触,耐腐蚀损坏。 还公开了成像器或显示器的数据线,其中电阻通过在晶体管岛结构的顶部上图案化铝(Al)线而减少,所形成的数据线优选地被封装。 此外,公开了具有第一和第二区域和感光元件的保护环。 第二区域包括ITO和下面的金属之间的电接触以及用作防潮层的第二层,并且优选地设置在保护环的拐角处,并且以使腐蚀最小化的方式与成像器的接触垫分离 。 感光元件具有设置在顶部接触层和非晶硅光电传感器岛之间的多层钝化层,除了光电传感器岛的顶表面上的选定的接触区域,其中顶部接触层与非晶硅材料的非晶硅材料电接触 光电传感器岛。 钝化层包括至少设置在光电传感器岛侧壁上的第一层无机阻挡层。

    Method of fabricating an imager array

    公开(公告)号:US06465286B2

    公开(公告)日:2002-10-15

    申请号:US09681070

    申请日:2000-12-20

    IPC分类号: H01L2100

    摘要: RD-25953-17-A method of fabricating an imager array having a plurality of pixels is provided in which each pixel is made up of a photodiode and a corresponding thin film transistor (TFT) switching device, the method including the steps of depositing materials to form the photodiode island and to form a TFT body over a gate electrode, then depositing a layer of source/drain metal over the silicon layers of the TFT body, and over a common dielectric layer, removing sections of the source/drain metal layer to expose a portion of the silicon layers of the TFT body, but leaving regions of sacrificial source/drain metal over the photodiode islands, and forming a back channel in the TFT body by a back channel etch step. The method further includes then removing the sacrificial regions of source/drain metal from above the photodiode islands, and depositing a passivation layer over the entire exposed surface of the array.

    Corrosion resistant imager
    9.
    发明授权

    公开(公告)号:US6037609A

    公开(公告)日:2000-03-14

    申请号:US996250

    申请日:1997-12-22

    摘要: A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.

    Corrosion resistant imager
    10.
    发明授权
    Corrosion resistant imager 失效
    耐腐蚀成像仪

    公开(公告)号:US06225212B1

    公开(公告)日:2001-05-01

    申请号:US09468892

    申请日:1999-12-22

    IPC分类号: H01L2144

    摘要: A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.

    摘要翻译: 公开了一种辐射成像仪,其通过接触焊盘腐蚀,防护环腐蚀或光电二极管泄漏而抵抗由于水分引起的劣化。 公开了一种大面积成像器的接触焊盘,其形成为三个不同的和电连接的区域。 接触垫区域的结构形成可靠的接触,耐腐蚀损坏。 还公开了成像器或显示器的数据线,其中电阻通过在晶体管岛结构的顶部上图案化铝(Al)线而减少,所形成的数据线优选地被封装。 此外,公开了具有第一和第二区域和感光元件的保护环。 第二区域包括ITO和下面的金属之间的电接触以及用作防潮层的第二层,并且优选地设置在保护环的拐角处,并且以使腐蚀最小化的方式与成像器的接触垫分离 。 感光元件具有设置在顶部接触层和非晶硅光电传感器岛之间的多层钝化层,除了光电传感器岛的顶表面上的选定的接触区域,其中顶部接触层与非晶硅材料的非晶硅材料电接触 光电传感器岛。 钝化层包括至少设置在光电传感器岛侧壁上的第一层无机阻挡层。