公开(公告)号：US5951879A

公开(公告)日：1999-09-14

申请号：US631003

申请日：1996-04-12

申请人： Kyoko Miyamoto ,  Satoshi Nakagawa

发明人： Kyoko Miyamoto ,  Satoshi Nakagawa

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L29/78 ,  H01L2/302

CPC分类号： H01L21/32137

摘要： A highly reliable semiconductor IC circuit can be produced by this etching method: A resist layer is formed on a polysilicon layer which is formed on a silicon dioxide layer on a silicon substrate. The resist layer is used as a mask, and silicon oxide layer deposits thereon while polysilicon layer is being etched. Carbon emission out of the resist layer is thus restrained, and thereby a selectivity, an etching speed ratio of polysilicon layer vs. silicon dioxide layer, is substantially raised.

摘要翻译： 可以通过该蚀刻方法制造高可靠性的半导体IC电路：在形成于硅衬底上的二氧化硅层上的多晶硅层上形成抗蚀剂层。 抗蚀剂层用作掩模，并且氧化硅层沉积在其上，同时蚀刻多晶硅层。 因此抑制了抗蚀剂层中的碳发射，从而大大提高了多晶硅层与二氧化硅层的选择性，蚀刻速度比。

公开(公告)号：US5401668A

公开(公告)日：1995-03-28

申请号：US115084

申请日：1993-09-02

申请人： Robert F. Kwasnick ,  Roger S. Ehle ,  Richard J. Saia

发明人： Robert F. Kwasnick ,  Roger S. Ehle ,  Richard J. Saia

IPC分类号： G01T1/20 ,  H01L21/28 ,  H01L31/0216 ,  H01L31/0232 ,  H01L2/302

CPC分类号： H01L31/02161 ,  H01L31/02322 ,  Y10S438/974

摘要： A method of fabricating a radiation imager with strong structural integrity and adhesion between the scintillator and photosensor array includes the steps of forming a photosensor array on a substrate; depositing a barrier layer over the photosensor array, the barrier layer having an upper surface of silicon nitride; treating the silicon nitride upper surface of the barrier layer to prepare the surface for the deposition of material thereover; and depositing a scintillator material over the treated upper surface of the barrier layer. The silicon nitride upper surface of the barrier layer is typically treated by etching the surface, such as in a reactive ion etch, for a selected amount of time, with less than about 500 .ANG. of material being removed from the surface.

摘要翻译： 一种制造具有强烈的结构完整性和闪烁体与光电传感器阵列之间的粘附性的辐射成像仪的方法包括以下步骤：在衬底上形成光电传感器阵列; 在所述光电传感器阵列上沉积阻挡层，所述阻挡层具有氮化硅的上表面; 处理阻挡层的氮化硅上表面以制备其上沉积材料的表面; 以及在所述被处理的所述阻挡层的上表面上沉积闪烁体材料。 阻挡层的氮化硅上表面通常通过在表面上蚀刻表面，例如在反应离子蚀刻中处理选定的时间，其中小于约500的材料从表面上除去。

公开(公告)号：US6037609A

公开(公告)日：2000-03-14

申请号：US996250

申请日：1997-12-22

申请人： Jianqiang Liu ,  Ching-Yeu Wei ,  Robert Forrest Kwasnick

发明人： Jianqiang Liu ,  Ching-Yeu Wei ,  Robert Forrest Kwasnick

IPC分类号： H01L27/146 ,  H01L2/302 ,  H01L29/04

CPC分类号： H01L27/14692 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14663

摘要： A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.