摘要:
A method comprises extracting a hierarchical grid constraint set and modeling one or more critical objects of at least one cell as a variable set. The method further comprises solving a linear programming problem based on the hierarchical grid constraint set with the variable set to provide initial locations of the critical objects of the at least one cell and determining target on-grid locations of the one or more critical objects in the at least one cell using the results of the linear programming solution.
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. Also, a method, system and program product for migrating an integrated circuit design from a source technology without RDR to a target technology with RDR in which space may be reserved for late insertion of a feature and in which migration first occurs in a primary compaction direction having less tolerant ground rules.
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. Also, a method, system and program product for migrating an integrated circuit design from a source technology without RDR to a target technology with RDR in which space may be reserved for late insertion of a feature and in which migration first occurs in a primary compaction direction having less tolerant ground rules.
摘要:
A method, apparatus, and computer program product for visually indicating the interaction between one or more edges of a design that contribute to a defined critical area pattern.
摘要:
A method, apparatus, and computer program product for visually indicating the interaction between one or more edges of a design that contribute to a defined critical area pattern.
摘要:
A method of calculating critical area in an integrated circuit design, said method comprising: inputting an integrated circuit design; associating variables with the positions of edges in said integrated circuit design; and associating cost functions of said variables with spacing between said edges in said integrated circuit design; wherein said cost functions calculate critical area contributions as the positions and length of said edges in said integrated circuit design change, and wherein said critical area contributions comprise a measure of electrical fault characteristics of said spacing between said edges in said integrated circuit design.