Integrated circuit yield enhancement using Voronoi diagrams
    10.
    发明授权
    Integrated circuit yield enhancement using Voronoi diagrams 有权
    使用Voronoi图的集成电路产量增强

    公开(公告)号:US07260790B2

    公开(公告)日:2007-08-21

    申请号:US10709292

    申请日:2004-04-27

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A method of calculating critical area in an integrated circuit design, said method comprising: inputting an integrated circuit design; associating variables with the positions of edges in said integrated circuit design; and associating cost functions of said variables with spacing between said edges in said integrated circuit design; wherein said cost functions calculate critical area contributions as the positions and length of said edges in said integrated circuit design change, and wherein said critical area contributions comprise a measure of electrical fault characteristics of said spacing between said edges in said integrated circuit design.

    摘要翻译: 一种在集成电路设计中计算临界面积的方法,所述方法包括:输入集成电路设计; 将变量与所述集成电路设计中的边缘的位置相关联; 以及将所述变量的成本函数与所述集成电路设计中的所述边缘之间的间隔相关联; 其中当所述集成电路设计中的所述边缘的位置和长度改变时,所述成本函数计算临界面积贡献,并且其中所述临界区域贡献包括所述集成电路设计中所述边缘之间的所述间隔的电气故障特征的量度。