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公开(公告)号：US20060003253A1
公开(公告)日：2006-01-05
申请号：US10881475
申请日：2004-06-30
申请人： Robert Meagley , Michael Goodner , Robert Leet , Michael McSwiney
发明人： Robert Meagley , Michael Goodner , Robert Leet , Michael McSwiney
IPC分类号： G03C1/492
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.
摘要翻译： 包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。 包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子 仅捕获第一部分的横截面。 一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。
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公开(公告)号：US20060063394A1
公开(公告)日：2006-03-23
申请号：US10947820
申请日：2004-09-22
IPC分类号： H01L21/31
CPC分类号： H01L21/02222 , C23C16/22 , H01L21/02123 , H01L21/02203 , H01L21/02211 , H01L21/3125 , H01L21/3185
摘要： A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.
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公开(公告)号：US20060046206A1
公开(公告)日：2006-03-02
申请号：US10927885
申请日：2004-08-27
IPC分类号： G03F7/00
CPC分类号： G03F7/40
摘要： A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.
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公开(公告)号：US07615337B2
公开(公告)日：2009-11-10
申请号：US10927885
申请日：2004-08-27
IPC分类号： G03F1/00
CPC分类号： G03F7/40
摘要： A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.
摘要翻译： 可以在光致抗蚀剂特征上各向异性地形成帽。 例如，可以在光致抗蚀剂特征上涂覆诸如聚合物的材料。 如果涂覆的材料是光活性的，则帽可以在垂直方向上优先生长，在本发明的一些实施方案中产生高纵横比结构。
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