公开(公告)号：US07180109B2

公开(公告)日：2007-02-20

申请号：US10922317

申请日：2004-08-18

申请人： Robert S. Chau ,  Doulgas Barlage ,  Been-Yih Jin

发明人： Robert S. Chau ,  Doulgas Barlage ,  Been-Yih Jin

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

摘要： The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

摘要翻译： 本发明是一种新颖的场效应晶体管，其具有由形成在绝缘基板上的窄带隙半导体膜形成的沟道区。 在窄带隙半导体膜上形成栅极电介质层。 然后在栅极电介质上形成栅电极。 由宽带隙半导体膜或金属形成的一对源极/漏极区域形成在栅电极的相对侧并且与低带隙半导体膜相邻。

公开(公告)号：US07176075B2

公开(公告)日：2007-02-13

申请号：US11031183

申请日：2005-01-06

申请人： Robert S. Chau ,  Doulgas Barlage ,  Been-Yih Jin

发明人： Robert S. Chau ,  Doulgas Barlage ,  Been-Yih Jin

IPC分类号： H01L21/338 ,  H01L31/0328

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

摘要： The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

公开(公告)号：US06825506B2

公开(公告)日：2004-11-30

申请号：US10306640

申请日：2002-11-27

申请人： Robert S. Chau ,  Doulgas Barlage ,  Been-Yih Jin

发明人： Robert S. Chau ,  Doulgas Barlage ,  Been-Yih Jin

IPC分类号： H01L31072

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

摘要： The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

摘要翻译： 本发明是一种新颖的场效应晶体管，其具有由形成在绝缘基板上的窄带隙半导体膜形成的沟道区。 在窄带隙半导体膜上形成栅极电介质层。 然后在栅极电介质上形成栅电极。 由宽带隙半导体膜或金属形成的一对源极/漏极区域形成在栅电极的相对侧并与低带隙半导体膜相邻。

公开(公告)号：US20050133866A1

公开(公告)日：2005-06-23

申请号：US11031183

申请日：2005-01-06

申请人： Robert Chau ,  Doulgas Barlage ,  Been-Yih Jin

发明人： Robert Chau ,  Doulgas Barlage ,  Been-Yih Jin

IPC分类号： H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L31/062

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

摘要： The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

公开(公告)号：US20050017275A1

公开(公告)日：2005-01-27

申请号：US10922317

申请日：2004-08-18

申请人： Robert Chau ,  Doulgas Barlage ,  Been-Yih Jin

发明人： Robert Chau ,  Doulgas Barlage ,  Been-Yih Jin

IPC分类号： H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

摘要： The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

摘要翻译： 本发明是一种新颖的场效应晶体管，其具有由形成在绝缘基板上的窄带隙半导体膜形成的沟道区。 在窄带隙半导体膜上形成栅极电介质层。 然后在栅极电介质上形成栅电极。 由宽带隙半导体膜或金属形成的一对源极/漏极区域形成在栅电极的相对侧并与低带隙半导体膜相邻。