公开(公告)号：US5259925A

公开(公告)日：1993-11-09

申请号：US894479

申请日：1992-06-05

申请人： Robert W. Herrick ,  Joseph L. Levy ,  Danny J. Krebs

发明人： Robert W. Herrick ,  Joseph L. Levy ,  Danny J. Krebs

IPC分类号： H01L21/78 ,  H01S5/02 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01S5/0203 ,  H01L21/78 ,  H01S5/0202 ,  H01S5/0207 ,  Y10S148/028 ,  Y10S148/131 ,  Y10S438/978

摘要： A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region. Such cleaving may occur either prior or subsequent to etching of facets for the semiconductor devices.

摘要翻译： 一种沿准确定位的平面切割半导体器件的方法。 抗蚀剂被施加到半导体器件的主表面，并且掩模被投影在被覆盖的主表面上。 在不需要劈裂的区域中，掩模是不透明的。 在抗蚀剂暴露之后，除去掩模和显影抗蚀剂，离子束被定位入入半导体表面，使得在没有抗蚀剂覆盖半导体结构的区域中发生离子束蚀刻。 一旦在未被抗蚀剂覆盖的区域中蚀刻足够的深度，使得那些区域中的半导体结构的强度显着小于由抗蚀剂覆盖的那些区域的强度，则离子束蚀刻工艺结束，并且抗蚀剂从半导体 结构体。 随后，在发生离子束蚀刻的区域内施加力以在该区域内切割半导体结构。 这种切割可以在蚀刻半导体器件的刻面之前或之后发生。

公开(公告)号：US4751707A

公开(公告)日：1988-06-14

申请号：US881666

申请日：1986-07-03

申请人： Danny J. Krebs ,  Jean A. Schuette ,  Robert R. Rice

发明人： Danny J. Krebs ,  Jean A. Schuette ,  Robert R. Rice

IPC分类号： H01S5/40 ,  H01S3/10

CPC分类号： H01S5/4031

摘要： A linear array of multimode laser diodes in a single wafer having a ratio of approximately one emitting stripe width to each non-emitting stripe isolation region width exhibits transverse lasing in a direction perpendicular to the normal laser output at input currents above a pre-determined transverse lasing threshold. Above the transverse lasing threshold, normal lasing is rapidly quenched.

摘要翻译： 在单个晶片中具有大约一个发射条宽度与每个非发射条纹隔离区宽度的比率的多模激光二极管的线性阵列在垂直于普通激光输出的方向上的横向激光在高于预定横向 激光阈值。 在横向激光阈值之上，正常的激光快速淬火。