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    Wafer level package with cavities for active devices
    2.
    发明授权
    Wafer level package with cavities for active devices 有权
    晶圆级封装，带有有源器件的空腔

    公开(公告)号：US07635606B2

    公开(公告)日：2009-12-22

    申请号：US11800379

    申请日：2007-05-05

    申请人： Robert W. Warren ,  Gene Gan ,  Tony LoBianco

    发明人： Robert W. Warren ,  Gene Gan ,  Tony LoBianco

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00333 ,  B81C2203/0136 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/315 ,  H01L24/48 ,  H01L25/50 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/7511 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： According to one exemplary embodiment, a method for forming a wafer level package includes fabricating an active device on a substrate in a semiconductor wafer, forming polymer walls around the active device, and applying a blanket film over the semiconductor wafer and the polymer walls to house the active device in a substantially enclosed cavity formed by the polymer walls and the blanket film. By way of examples and without limitation, the active device can be a microelectromechanical systems (“MEMS”) device, a bulk acoustic wave (“BAW”) filter, or a surface acoustic wave (“SAW”) filter. According to one embodiment, solder bumps can be applied to interconnect traces of the active device, and the semiconductor wafer can then be diced to form an individual die. According to another embodiment, the semiconductor wafer can be diced to form an individual die, then the individual die is wire bonded to a circuit board.

    摘要翻译： 根据一个示例性实施例，用于形成晶片级封装的方法包括在半导体晶片中的衬底上制造有源器件，在有源器件周围形成聚合物壁，以及在半导体晶片和聚合物壁上施加覆盖膜以容纳 该有源器件位于由聚合物壁和覆盖膜形成的基本上封闭的空腔中。 作为示例而非限制，有源器件可以是微机电系统（“MEMS”）器件，体声波（“BAW”）滤波器或表面声波（“SAW”）滤波器。 根据一个实施例，可以施加焊料凸块来互连有源器件的迹线，然后可以对半导体晶片进行切割以形成单个管芯。 根据另一实施例，可以对半导体晶片进行切割以形成单个管芯，然后将单个管芯接合到电路板上。