公开(公告)号：US20210159162A1

公开(公告)日：2021-05-27

申请号：US17166102

申请日：2021-02-03

Applicant: Rohm Co., Ltd.

Inventor： Kota ISE ,  Koshun SAITO

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

公开(公告)号：US20240112990A1

公开(公告)日：2024-04-04

申请号：US18249473

申请日：2021-12-14

Applicant: ROHM CO., LTD.

Inventor： Koshun SAITO ,  Kota ISE ,  Kosuke YAMADA

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49524 ,  H01L23/49537 ,  H01L24/27 ,  H01L24/32 ,  H01L24/35 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/96 ,  H01L23/49562 ,  H01L2224/27515 ,  H01L2224/32245 ,  H01L2224/35985 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/73263 ,  H01L2924/13064

Abstract: A semiconductor device manufacturing method includes a first preparation step, a second preparation step, a mounting step, a third preparation step, a placing step and a curing step. In the first preparation step, a first leadframe including an island part is prepared. In the second preparation step, a semiconductor element including an element obverse surface, an element reverse surface, a first electrode and a second electrode is prepared. In the mounting step, the semiconductor element is mounted on the island part with a first conductive paste interposed between the element reverse surface and the island part. In the third preparation step, a second leadframe including a first part, a second part, a frame part, a first connecting part and a second connecting part is prepared. In the placing step, the second leadframe is placed with a second conductive paste interposed between the first part and the first electrode and with a third conductive paste interposed between the second part and the second electrode. In the curing step, the first conductive paste, the second conductive paste and the third conductive paste are hardened.

公开(公告)号：US20200176371A1

公开(公告)日：2020-06-04

申请号：US16694470

申请日：2019-11-25

Applicant: Rohm Co., Ltd.

Inventor： Kota ISE ,  Koshun SAITO

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

公开(公告)号：US20150325504A1

公开(公告)日：2015-11-12

申请号：US14708962

申请日：2015-05-11

Applicant: ROHM CO., LTD.

Inventor： Kota ISE

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor device is provided with a semiconductor element, a main lead on which the semiconductor element is disposed, and a resin package that covers the semiconductor element and the main lead. A notch that is recessed toward the center of the main lead in plan view as seen in the thickness direction of the semiconductor element is formed in the main lead.

Abstract translation: 半导体器件设置有半导体元件，设置有半导体元件的主引线和覆盖半导体元件和主引线的树脂封装。 在主引线上形成有在半导体元件的厚度方向上看到的平面图中朝向主引线的中心凹陷的切口。

公开(公告)号：US20240282690A1

公开(公告)日：2024-08-22

申请号：US18652315

申请日：2024-05-01

Applicant: Rohm Co., Ltd.

Inventor： Kota ISE ,  Koshun SAITO

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L23/3121 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2924/1815

Abstract: A semiconductor device includes a lead with a terminal, and a sealing resin partially covering the terminal. The lead includes a base and metal layer covering the base. The base has a first terminal-extending portion forming the terminal. The first terminal-extending portion, exposed from the sealing resin, extends in a first direction crossing the thickness direction. The first terminal-extending portion includes a first end facing in the first direction and a first side wall facing in a second direction crossing the thickness and first directions. The first side wall has, in the first direction, a first side closer to the first end, a second side closer to the sealing resin, and a third side between the first side and the second side. The metal layer, covering the first end, the first side and the second side, is provided at a location avoiding the third side.

公开(公告)号：US20230275006A1

公开(公告)日：2023-08-31

申请号：US18006695

申请日：2021-11-18

Applicant: ROHM CO., LTD.

Inventor： Kota ISE

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/07 ,  H01L23/498

CPC classification number: H01L23/49537 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L25/074 ,  H01L23/49838 ,  H01L2224/48247 ,  H01L2224/40245 ,  H01L2224/73221 ,  H01L2924/181 ,  H01L2924/13091 ,  H01L2924/13064 ,  H01L2924/13055

Abstract: A semiconductor device includes a semiconductor element, a conductive member and a connecting member. The semiconductor element has a reverse surface formed with a first electrode and an obverse surface formed with a second electrode and a third electrode. The reverse surface and the obverse surface are spaced apart from each other in a z direction. Current flow between the first electrode and the second electrode is on-off controlled according to a first drive signal inputted to the third electrode. The conductive member has a first bond surface and a second bond surface each facing in the same direction as the reverse surface. The third electrode is bonded to the first bond surface. The connecting member is bonded to the second bond surface, and the second bond surface does not overlap with the semiconductor element as viewed in the z direction.